42.10CHF
ab 10 39.00CHF
ab 50 37.08CHF
ab 100 35.24CHF

NTE5613 Triac 10A 100V TO-127

Bestell-Nr.:    NTE5613


Verfügbarkeit:     PICTURE_ONLY_TWO
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NTE5613 NTE-5613 | ECG5613 ECG-5613 | NTE Electronics NTE5613
TRIAC 100V, 10A, TO-127

Info als pdf-File
Dieses pdf enthält Daten der Typen: NTE5611, NTE5612, NTE5613, NTE5615, NTE5618

See also >>> NTE5611 thru NTE5618

Description:
The NTE5611 through NTE5618 TRIACs are designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls, and power supplies; or wherever full- wave silicon gate controlled solid-state devices are needed. TRIAC type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.

Features:
- All Diffused and Passivated Junctions for Greater Parameter Uniformity and Stability
- Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability.
- Gate Triggering Guaranteed in Four Modes

Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings: (Note 1)
Repetitive Peak Off-State Voltage (TJ = +100°C, Note 2), VDRM
NTE5611.................................................................... 25V
NTE5612.................................................................... 50V
NTE5613...................................................................100V
NTE5615...................................................................300V
NTE5618...................................................................600V
On-State Current RMS (TC = +75°C), IT(RMS).......................................... 10A
Peak Surge Current (One Full Cycle, 60Hz, TJ = -40° to +100°C), ITSM.................. 100A
Circuit Fusing Considerations (TJ = -40° to +100°C, t = 1.0 to 8.3ms), I2t................ 40 A2 s
Peak Gate Power, PGM............................................................ 10W
Average Gate Power, PG(AV).......................................................0.5W
Peak Gate Current, IGM.............................................................2A
Operating Junction Temperature Range, TJ.................................-40° to +100°C
Storage Temperature Range, Tstg.......................................... -40° to +150°C
Mounting Torque (6-32 Screw, Note 3)............................................ 12in. lb.
Thermal Resistance, Junction-to-Case, RthJC.......................................2°C/W
Thermal Resistance, Case-to-Ambient, RthJA...................................... 50°C/W

Note 1. NTE5618 is a discontinued device and no longer available.
Note 2. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage.
Note 3. Torque rating applies with use of torque washer. Mounting torque in excess of 8 in. lbs. does not appreciably lower case-to-sink thermal resistance. Anode lead and heatsink contact pad are common.
Note 4. For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +230°C.


Unser Halbleiter Katalog (ohne NTE-Sortiment)
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Einzel-Halbleiter (ganzes Sortiment)

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Alle NTE-Austausch-Halbleiter sind einzeln in durchsichtigen Plastikbeuteln verpackt, auf welchen die wichtigsten Daten vermerkt sind.
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