NTE5589
Silicon Controlled Rectifier (SCR), 1200V, 550A TO-118
for Phase Control Applications

To order >>> NTE5587, NTE5593

Features:
- Low On-State Voltage
- High di/dt
- High dv/dt
- Excellent Surge and I2t Ratings

Applications:
- Power Supplies
- Battery Chargers
- Motor Controls

Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratingsand Electrical Characteristics:
Repetitive Peak Voltages, VDRM & VRRM
NTE5587...................................................................600V
NTE5589.................................................................. 1200V
NTE5593.................................................................. 1600V
RMS On-State Current, IT(RMS).....................................................550A
Average On-State Current, IT(AV).....................................................350
Peak One-Cycle, Non-Repetitive On-State Surge Current, ITSM
50Hz.....................................................................9100A
60Hz...................................................................10,000A
Critical Rate-of-Rise of On-State Current, di/dt
Repetitive...............................................................150A/μs
Non-Repetitive.......................................................... 800A/μs
I2t fo Fusing (8.2ms), I2t.................................................... 416,000 A2 sec
Peak Gate Power Dissipation, PGM.................................................. 16W
Average Gate Power Dissipation, PG(AV).............................................. 3W
Peak On-State Voltage (ITM = 625A, TJ = +25°C), VTM.................................1.4V
Peak Forward Leakage Current (At VDRM, TJ = +125°C), IDRM.........................30mA
Peak Reverse Leakage Current (At VRRM, TJ = +125°C), IRRM.........................30mA
Gate Current to Trigger (VD = 12V, TJ = +25°C), IGT.................................150mA
Gate Voltage to Trigger (VD = 12V, TJ = +25°C), VGT.....................................3V
Non-Triggering Gate Voltage (At VDRM, TJ = +125°C), VGDM...........................0.15V
Peak Forward Gate Current, IGTM.....................................................4A
Peak Reverse Gate Voltage, VGRM.................................................... 5V
Typical Turn-Off Time, tq
(IT = 250A, diR/dt = 25A/μs, re-applied, dv/dt = 20V/μs, linear to 0.8VDRM, TJ = +125°C) 150μs
Typical Turn-On Time (VD = 100V, IT = 100A), ton...................................... 7μs
Minimum Critical dv/dt exponential to VDRM (TJ = +125°C), dv/dt.....................300V/μs
Operating Junction Temperature Range, TJ.................................. -40° to +125°C
Storage Temperature Range, Tstg.......................................... -40° to +150°C
Maximum Thermal Resistance, Junction-to-Case, RthJC...........................0.10°C/W
Maximum Thermal Resistance, Case-to-Sink (Lubricated), RthCS...................0.05°C/W
Mounting Torque.............................................................. 360in.-lb.
Mounting Torque (Lubricated).................................................. 400kg-cm


Unser Halbleiter Katalog (ohne NTE-Sortiment)
NTE Sortiment (unser ganzes Sortiment)
Einzel-Halbleiter (ganzes Sortiment)

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Anmerkung zu den NTE/ECG Austauschhalbleiter:
NTE-Austauschhalbleiter (früher ECG Philips und Sylvania) sind sorgfältig ausgesuchte und erprobte Halbleiter, die einen sicheren Ersatz für Originaltypen verschiedenster Hersteller und Ursprünge für fast alle Applikationsbereiche im Wartungsdienst bieten.
Alle NTE-Austausch-Halbleiter sind einzeln in durchsichtigen Plastikbeuteln verpackt, auf welchen die wichtigsten Daten vermerkt sind.