NTE916 High Current NPN-Transistor Array Common Emitter PDIP-16

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Description:

The NTE916 is a high current transistor array in a 16-Lead DIP type package consisting of seven silicon NPN transistors on a common monolithic substrate connected in a common-emitter configuration designed for directly driving seven-segment displays and light-emitting diode (LED) displays. This device is also well suited for a variety of other drive applications including relay control and thyristor firing.

Features:

• Seven Transistors Permit a Wide Range of Applications
• High Collector Current: I_C = 100mA Max
• Low Collector-Emitter Saturation Voltage: V_CE(sat) = 400mV @ 50mA

Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)

Power Dissipation (Total Package), PD		750mW
Per Transistor		500mW
Derate Linearly Above 55°C		6.67mW/°C
Operating Ambient Temperature Range, TA		-55°C to +125°C
Storage Temperature Range, Tstg		-65°C to +150°C
Lead Temperature (During Soldering, 1/16" from case, 10sec Max), TL		+265°C
The Following Ratings Apply for Each Transistor in the Device
Collector-Emitter Voltage, VCEO		16V
Collector-Base Voltage, VCBO		20V
Collector-Substrate Voltage (Note 1), VCIO		20V
Emitter-Base Voltage, VCEO		5V
Collector Current, IC		100mA
Base Current, IB		20mA

Note 1.

The collector of each transistor of the NTE916 is isolated from the substrate by an integral diode. The substrate must be connected to a voltage which is more negative than any collector voltage in order to maintain isolation between transistors and provide normal transistor action. To avoid undesired coupling between transistors, the substrate terminal (Pin5) shoul be maintained at either DC or signal (AC) ground. A suitable bypass capacitor can be used to establish a signal ground.

Electrical Characteristics: (T_A = +25°C unless otherwise specified)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Units
Collector-Emitter Breakdown Voltage	V(BR)CES	IC = 500µA, IE = 0	20	60	-	V
Collector-Substrate Breakdown Voltage	V(BR)CIO	ICI = 500µA, IE = 0, IB = 0	20	60	-	V
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC = 1mA, IB = 0	16	24	-	V
Emitter-Base Breakdown Voltage	V(BR)EBO	IC = 500µA	5.0	6.9	-	V
DC Forward Current Transfer Ratio	hFE	VCE = 500mV, IC = 30mA	30	68	-
		VCE = 800mV, IC = 50mA	40	70	-
Base-Emitter Saturation Voltage	VBE(sat)	IC = 30mA, IB = 1mA	-	0.87	1.0	V
Collector-Emitter Saturation Voltage	VCE(sat)	IC = 30mA, IB = 1mA	-	0.27	0.5	V
		IC = 50mA, IB = 5mA	-	0.4	0.7	V
Collector Cutoff Current	ICEO	VCE = 10V, IB = 0	-	-	10	µA
	ICBO	VCB = 10V, IE = 0	-	-	1	µA

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