NTE5524
Silicon Controlled Rectifier (SCR), 25A, 200V TO-48

See also >>> NTE5520 thru NTE5531

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NTE-ECG replacement list as pdf-file
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Maximum Ratings and Characteristics:
Blocking State (TJ = +125°C unless otherwise specified)
Repetitive Peak Forward and Reverse Voltage, VDRM, VRRM
NTE5520.................................................................... 25V
NTE5521.................................................................... 50V
NTE5522...................................................................100V
NTE5523...................................................................150V
NTE5524...................................................................200V
NTE5525...................................................................250V
NTE5526...................................................................300V
NTE5527...................................................................400V
NTE5528...................................................................500V
NTE5529...................................................................600V
NTE5530...................................................................700V
NTE5531...................................................................800V
Non-Repetitive Transient Peak Forward and Reverse Voltage (t ≤ 5.0msec), VRSM
NTE5520.................................................................... 35V
NTE5521.................................................................... 75V
NTE5522...................................................................150V
NTE5523...................................................................225V
NTE5524...................................................................300V
NTE5525...................................................................350V
NTE5526...................................................................400V
NTE5527...................................................................500V
NTE5528...................................................................600V
NTE5529...................................................................780V
NTE5530...................................................................840V
NTE5531...................................................................960V
Forward and Reverse Leakage Current, (full cycle average), ID(av), IR(av)
NTE5520.................................................................. 6.5mA
NTE5521.................................................................. 6.5mA
NTE5522.................................................................. 6.5mA
NTE5523.................................................................. 6.5mA
NTE5524.................................................................. 6.0mA
NTE5525.................................................................. 5.5mA
NTE5526.................................................................. 5.0mA
NTE5527.................................................................. 4.0mA
NTE5528.................................................................. 3.0mA
NTE5529.................................................................. 2.5mA
NTE5530.................................................................2.25mA
NTE5531.................................................................. 2.0mA

Conducting State (TJ = +125°C unless otherwise specified)
RMS Forward Current, IT(rms)........................................................ 25A
Forward Current (180° Conduction), IT(av).............................................16A
Surge Current (at 60Hz), ITSM
1/2 Cycle...................................................................150A
3 Cycles...................................................................110A
10 Cycles...................................................................90A
I2t for Fusing (at 60Hz half-wave), I2t.............................................90A2sec
Forward Voltage Drop at TJ = +25°C, (IF = 16Adc), VTM................................ 1.7V
Thermal Characteristics
Operating Junction Temperature Range, TJ.................................. -65° to +125°C
Storage Temperature Range, Tstg.......................................... -65° to +150°C
Max. Thermal Impedance, Junction-to-Case, RthJC................................ 1.3°C/W
Max. Thread Torque, Lubricated.................................................. 30in. lbs
Gate Parameters (TJ = +25°C unless otherwise specified)
Gate Current to Trigger (VFB = 12V), IGT............................................ 40mA
Gate Voltage to Trigger Over Temperature Range (VFB = 12V), VGT.....................3.0V
Non-Triggering Gate Voltage at TJ = +125°C (Rated VFB), VGNT.......................0.25V
Peak Forward Gate Current, IGFRM.................................................... 5A
Peak Reverse Gate Voltage, VGRM.................................................... 5V
Peak Gate Power, PGM.............................................................5W
Average Gate Power, PG(AV)........................................................ 0.5W
Switching State
Typical Turn-On Time (IT = 10A, 10-90%, VDRM = 10V, TJ = +25°C), ton.................. 3μs
Minimum di/dt (Linear to 5.0 IT(av)), di/dt............................................ 25A/μs
Typical Turn-Off Time, tq
(IT = 10A, TJ = +125°C, diR/dt = 10A/μs, dv/dt = 20Vμs Linear to 0.8 VDRM)......... 50μs
Typical dv/dt (Exp. to VDRM), dv/dt................................................ 100V/μs


Unser Halbleiter Katalog (ohne NTE-Sortiment)
NTE Sortiment (unser ganzes Sortiment)
Einzel-Halbleiter (ganzes Sortiment)

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Anmerkung zu den NTE/ECG Austauschhalbleiter:
NTE-Austauschhalbleiter (früher ECG Philips und Sylvania) sind sorgfältig ausgesuchte und erprobte Halbleiter, die einen sicheren Ersatz für Originaltypen verschiedenster Hersteller und Ursprünge für fast alle Applikationsbereiche im Wartungsdienst bieten.
Alle NTE-Austausch-Halbleiter sind einzeln in durchsichtigen Plastikbeuteln verpackt, auf welchen die wichtigsten Daten vermerkt sind.