NTE5511
Silicon Controlled Rectifier (SCR), 5A, 200V TO-126

See also >>> NTE5511, NTE5513

Description:
The NTE5511 thru NTE5513 all-diffused, three junction, silicon controlled rectifiers (SCR´s) are intended for use in power-control and power-switching applications. These devices are available in a TO66 type package and have a blocking voltage capability of up to 600V and a forward current rating of 5A (rms value) at a case temperature of +75°C.

Features:
- Designed Especially for High-Volume Systems
- Readily Adaptable for PC Boards and Metal Heat Sinks
- Low Switching Losses
- High di/dt and dv/dt Capabilities
- Shorted Emitter Gate-Cathode Construction
- Forward and Reverse Gate Dissipation Ratings
- All-Diffused Construction Assures Exceptional Uniformity and Stability of Characteristics
- Direct-Soldered Internal Construction Assures Exceptional Resistance to Fatigue
- Symmetrical Gate-Cathode Construction Provides Uniform Current Density, Rapid Electrical Conduction, and Efficient Heat Dissipation
- All-Welded Construction and Hermetic Sealing
- Low Leakage Currents, Forward and Reverse
- Low Forward Voltage Drop at High Current Levels
- Low Thermal Resistance

Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings: (For Operation with Sinusoidal AC Supply Voltage at a Frequency between 50Hz and 400Hz, and with Resistive or Inductive Load)
Transient Peak Reverse Voltage (Non-Repetitive), VRM (non-rep)
NTE5511...................................................................330V
NTE5512...................................................................660V
NTE5513...................................................................700V
Peak Reverse Voltage (Repetitive), VRM (rep)
NTE5511...................................................................200V
NTE5512...................................................................400V
NTE5513...................................................................600V
Peak Forward Blocking Voltage (Repetitive), VFBOM (rep)
NTE5511...................................................................600V
NTE5512...................................................................600V
NTE5513...................................................................700V
Average DC Forward Current, IF(av)
(TC = +75°C mounted on heat sink, conduction angle or 180°).................... 3.2A
RMS Forward Current (TC = +75°C mounted on heat sink), IFRMS.........................5A
Peak Surge Current (For one cycle of applied voltage), iFM(surge).........................60A
Sub-Cycle Surge (Non-Repetitive, for a period of 1ms to 8.3ms), I2t.................. 15A2sec
Rate of Change of Forward Current (Note 1), di/dt.................................. 200A/μs
Gate Power (Peak, Forward, or Reverse, for 10μs duration, Note 2), PGM................ 13W
Average Gate Power (Note 2), PGAV...............................................500mW
Operating Case Temperature Range, TC.................................... -40° to +100°C
Storage Temperature Range, Tstg.......................................... -40° to +125°C

Note 1. VFB = vBOO(min value), IGT = 200mA, 0.5μs rise time
Note 2. Any values of peak gate current or peak gate voltage to give the maximum gate power is permissible.


Unser Halbleiter Katalog (ohne NTE-Sortiment)
NTE Sortiment (unser ganzes Sortiment)
Einzel-Halbleiter (ganzes Sortiment)

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Anmerkung zu den NTE/ECG Austauschhalbleiter:
NTE-Austauschhalbleiter (früher ECG Philips und Sylvania) sind sorgfältig ausgesuchte und erprobte Halbleiter, die einen sicheren Ersatz für Originaltypen verschiedenster Hersteller und Ursprünge für fast alle Applikationsbereiche im Wartungsdienst bieten.
Alle NTE-Austausch-Halbleiter sind einzeln in durchsichtigen Plastikbeuteln verpackt, auf welchen die wichtigsten Daten vermerkt sind.