NTE5463
Silicon Controlled Rectifier (SCR) 10A, 200V TO-220

See also >>> NTE5461 thru NTE5468

Description:
The NTE5461 through NTE5468 series silicon controlled rectifiers are designed primarily for half- wave AC control applications such as motor controls, heating controls, and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. These devices are supplied in a TO220 type package.

Features:
- Glass Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability
- Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation, and Durability
- Blocking Voltage to 800 Volts

Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage; Peak Repetitive Off-State Voltage (Note 1), VRRM, VDRM
NTE5461.................................................................... 50V
NTE5462...................................................................100V
NTE5463...................................................................200V
NTE5465...................................................................400V
NTE5466...................................................................600V
NTE5468...................................................................800V
Non-Repetitive Peak Reverse Voltage; Non-Repetitive Off-State Voltage, VRSM, VDSM
NTE5461.................................................................... 75V
NTE5462...................................................................125V
NTE5463...................................................................250V
NTE5465...................................................................500V
NTE5466...................................................................700V
NTE5468...................................................................900V
RMS Forward Current (All Conducting Angles, TC = +75°C), IT(RMS)...................... 10A
Peak Forward Surge Current (1 Cycle, Sine Wave, 60Hz, TC = +80°C), ITSM.............. 100A
Circuit Fusing Considerations (TJ = -65° to +100°C, t = 1 to 8.3ms), I2t.................40A2s
Forward Peak gate Power (t ≤ 10μs), PGM............................................ 16W
Forward Average Gate Power, PG(AV).............................................. 500mW
Operating Junction Temperature Range, TJ.................................. -40° to +100°C
Storage Temperature Range, Tstg.......................................... -40° to +150°C
Thermal Resistance, Junction-to-Case, RthJC.......................................2°C/W

Note 1. VDRM and VRRM for all types can be applied on a continuous DC basis without incurring damage. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode.


Unser Halbleiter Katalog (ohne NTE-Sortiment)
NTE Sortiment (unser ganzes Sortiment)
Einzel-Halbleiter (ganzes Sortiment)

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Anmerkung zu den NTE/ECG Austauschhalbleiter:
NTE-Austauschhalbleiter (früher ECG Philips und Sylvania) sind sorgfältig ausgesuchte und erprobte Halbleiter, die einen sicheren Ersatz für Originaltypen verschiedenster Hersteller und Ursprünge für fast alle Applikationsbereiche im Wartungsdienst bieten.
Alle NTE-Austausch-Halbleiter sind einzeln in durchsichtigen Plastikbeuteln verpackt, auf welchen die wichtigsten Daten vermerkt sind.