NTE310
Integrated Thyristor/Rectifier (ITR) TV Horizontal Deflection & Trace Switch

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Repetitive Peak Forward Off-State and Reverse Voltage, VDRM, VRRM...................800V
RMS On-State Current, ITRMSM, IFRMSM...............................................8A
Mean On-State Current (TC = +80°C), ITAVM, IFAVM
Thyristor...................................................................3.4A
Diode.....................................................................3.45A
Repetitive Peak On-State Current, ITRM, IFRM.......................................... 50A
Surge Current (t = 10ms, tvi = +100°C), ITSM, IFSM
Thyristor.................................................................... 80A
Diode.......................................................................60A
Non-Repetitive Rate of Rise of On-State Current, di/dtcrit...........................500A/μs
Repetitive Rate of Rise of On-State Current (ITM = 20A, tvi = +100°C, VDM = 640V), di/dtcrit
(Pulse Generator Data: vL = 8V, iK = 0.25A, diG/dt ≥ 0.25A/μs)
fo = 50Hz................................................................ 300A/μs
fo = 16kHz...............................................................100A/μs
Rate of Rise of Off-State Voltage (tvi = +100°C, VD = 536V), dv/dtcrit.................. 400V/μs
Rate of Rise of Voltage Subsequent to Prior On-State Current, dv/dtcrit
tvi = +100°C, VD = 536V...................................................200V/μs
Peak Gate Power Losses (tg ≤ 10μs), PGM...........................................10W
Total Mean Gate Power Loss for One Cycle, PG........................................ 2W
Operating Temperature Range, Topr........................................ -40° to +100°C
Storage Temperature Range, Tstg.......................................... -40° to +130°C
Thermal Resistance, Junction-to-Case, RthJC.....................................2.3°C/W
Thermal Resistance, Junction-to-Ambient, RthJA
Without Heatsink.........................................................35°C/W
On Vertical Cooling Fin 60mm x 60mm x 1.5mm, Al or Cu, Roughened Surface.. 10°C/W

Electrical Characteristics:
Maximum On-State Voltage (tvi = +25°C, iT = iF = 10A), VT, VF
Thyristor.................................................................. 2.16V
Diode...................................................................... 2.2V
Threshold Voltage, V(TO)
Thyristor...................................................................1.6V
Diode...................................................................... 1.4V
Forward Slope Resistance, rT, rF
Thyristor.................................................................... 53Ω
Diode.......................................................................70Ω
Maximum Gate Trigger Voltage (tvi = +25°C, VD = 6V, RA = 20Ω), VGT...................2.0V
Minimum Gate Trigger Voltage (tvi = +100°C, VD = 6V, RA = 20Ω), VGT...................0.1V
Maximum Gate Trigger Current (tvi = +25°C, VD = 6V, RA = 20Ω), IGT...................50mA
Maximum Holding Current (tvi = +25°C, VD = 6V, RA = 20Ω), IH........................ 100mA
Maximum Latching Current (tvi = +25°C, VD = 6V, RGK ≥ 20Ω), IL...................... 210mA
(Pulse Generator Data: iG = 0.25A, diG/dt = 0.25A/μs, tg = 4μs)
Typical Capacitance, Anode-Cathode at Zero Voltage (tvi = +25°C, fo = 16kHz), Czero.....250pF
Maximum Lag Charge (tvi = +100°C, iFM = 10A, -diF/dt = 10A/μs), QS.................0.96μAs
Maximum Forward Off-State and Reverse Current (tvi = +100°C, vD = 800V), iD, iR.......1.5mA
Maximum Gate Controlled Delay Time (tvi = +25°C, VD = 536V, iTM = 5A), tgd............ 0.8μs
(Pulse Generator Data: iG = 0.25A, diG/dt = 0.5A/μs)
Maximum Pulse Turn-Off Time (tvi = +100°C), tqp.................................... 2.9μs
Typical Pulse Turn-Off Time (tvi = +80°C, fo = 16kHz), tqp.............................1.8μs
Maximum Turn-On Voltage Peak (tvi = +25°C, iFM = 1A, diF/dt = 5A/μs), uFRM...............3V
Maximum Reverse Recovery Time (tvi = +25°C, iFM = 10A, -diF/dt = 10A/μs), trr.......... 0.7μs


Unser Halbleiter Katalog (ohne NTE-Sortiment)
NTE Sortiment (unser ganzes Sortiment)
Einzel-Halbleiter (ganzes Sortiment)

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Anmerkung zu den NTE/ECG Austauschhalbleiter:
NTE-Austauschhalbleiter (früher ECG Philips und Sylvania) sind sorgfältig ausgesuchte und erprobte Halbleiter, die einen sicheren Ersatz für Originaltypen verschiedenster Hersteller und Ursprünge für fast alle Applikationsbereiche im Wartungsdienst bieten.
Alle NTE-Austausch-Halbleiter sind einzeln in durchsichtigen Plastikbeuteln verpackt, auf welchen die wichtigsten Daten vermerkt sind.