NTE99
Silicon NPN Transistor
Darlington w/Base-Emitter Speed-up Diode
TO-3
Description:
The NTE99 is a silicon Darlington NPN transistor in a TO3 type package designed for high voltage, high-speed, power switching in inductive circuits where fall time is critical. This device is particularly suited for line-operated switch-mode applications.
Applications:
- Switching Regulators
- Motor Controls
- Inverters
- Solenoid and Relay Drivers
Features:
- Fast Turn-On Times:
1.0µs (max) Inductive Crossover Time - 20A
2.5µs (max) Inductive Storage Time - 20A - Operating Temperature Range: -65° to + +200°C
Absolute Maximum Ratings:
| Collector-Emitter Voltage, VCEO |
400V |
| Collector-Emitter Voltage, VCEV |
600V |
| Emitter-Base Voltage, VEB |
8V |
Collector Current, IC
Continuous
Peak (Note 1) |
50A
75A |
Base Current, IB
Continuous
Peak (Note 1) |
10A
15A |
| Total Device Dissipation (TC = +25°C), PD |
250W |
| Derate above 25°C |
1.43W/°C |
| Total Device Dissipation (TC = +100°C), PD |
143W |
| Operating Junction Temperature Range, TJ |
-65° to +200°C |
| Storage Temperature Range, Tstg |
-65° to +200°C |
| Thermal Resistance, Junction-to-Case, RthJC |
0.7°C/W |
| Maximum Lead Temperature (During Soldering, 1/8" from case, 5sec), TL |
+275°C |
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle </= 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
| Parameter |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Unit |
| OFF Characteristics (Note 2) |
| Collector-Emitter Sustaining Voltage |
VCEO(sus) |
IC = 100mA, IB = 0, Vclamp = 400V |
400 |
- |
- |
V |
| Collector Cutoff Current |
ICEV |
VCEV = 600V, VBE(off) = 1.5V |
- |
- |
0.25 |
mA |
| Emitter Cutoff Current |
IEBO |
VEB = 2V, IC = 0 |
- |
- |
350 |
mA |
| ON Characteristics (Note 2) |
| DC Current Gain |
hFE |
IC = 20A, VCE = 5V |
25 |
- |
- |
|
| IC = 40A, VCE = 5V |
10 |
- |
- |
|
| Collector-Emitter Saturation Voltage |
VCE(sat) |
IC = 20A, IB = 1A |
- |
- |
2.2 |
V |
| IC = 50A, IB = 10A |
- |
- |
5.0 |
V |
| Base-Emitter Saturation Voltage |
VBE(sat) |
IC = 20A, IB = 1A |
- |
- |
2.75 |
V |
| Diode Forward Voltage |
Vf |
IF = 20A, Note 3 |
- |
2.5 |
5.0 |
V |
| Dynamic Characteristics |
| Output Capacitance |
Cob |
VCB = 10V, IE = 0, f = 100kHz |
- |
- |
750 |
pF |
| Switching Characteristics (Resistive Load) |
| Delay Time |
td |
VCC = 250V, IC = 20A, VBE(off) = 5V, tp = 25µs,
Duty Cycle </= 2% |
- |
0.14 |
0.30 |
µs |
| Rise Time |
tr |
- |
0.3 |
1.0 |
µs |
| Storage Time |
ts |
- |
0.8 |
2.5 |
µs |
| Fall Time |
tf |
- |
0.3 |
1.0 |
µs |
| Switching Characteristics (Inductive Load, Clamped) |
| Storage Time |
tsv |
IC = 20A(pk), Vclamp = 250V, IB1 = 1A,
VBE(off) = 5V |
- |
1.0 |
2.5 |
µs |
| Crossover Time |
tc |
- |
0.36 |
1.0 |
µs |
| Note 2. | Pulse Test: Pulse Width = 300µs, Duty Cycle </= 2%. |
| Note 3. | The internal Collector-to-Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers. |
Anmerkung zu den NTE/ECG Austauschhalbleiter:
NTE-Austauschhalbleiter (früher ECG Philips und Sylvania) sind sorgfältig
ausgesuchte und erprobte Halbleiter, die einen sicheren Ersatz
für Originaltypen verschiedenster Hersteller und Ursprünge für
fast alle Applikationsbereiche im Wartungsdienst bieten.
Alle NTE-Austausch-Halbleiter sind einzeln in durchsichtigen
Plastikbeuteln verpackt, auf welchen die wichtigsten Daten
vermerkt sind.
Falls Sie einen Halbleiter suchen, können Sie entweder die NTE QuickCross
Software bei uns als CD kaufen (Best.Nr. 08.NTE.CD) oder
sie gratis vom Internet runterladen.
