NTE97 NPN Transistor HV Darlington 10A 400V Power Amp TO-3

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Silicon NPN Transistor High Voltage Darlington Power Amp, Switch
TO-3

Description:

The NTE97 is a silicon Darlington NPN transistor in a TO3 type package designed for high voltage, high-speed, power switching in inductive circuits where fall time is critical. This device is particularly suited for line-operated switch-mode applications.

Applications:

• Switching Regulators
• Inverters
• Solenoid and Relay Drivers

Absolute Maximum Ratings:

Collector-Emitter Voltage, VCEO(sus)	400V
Collector-Emitter Voltage, VCEX(sus)	450V
Collector-Emitter Voltage, VCEV	500V
Emitter-Base Voltage, VEB	8V
Collector Current, IC             Continuous             Peak (Note 1)	10A 20A
Base Current, IB             Continuous             Peak (Note 1)	2.5A 5.0A
Total Device Dissipation (TC = +25°C), PD	150W
Derate above 25°C	0.86W/°C
Total Device Dissipation (TC = +100°C), PD	100W
Operating Junction Temperature Range, TJ	-65° to +200°C
Storage Temperature Range, Tstg	-65° to +200°C
Thermal Resistance, Junction-to-Case, RthJC	1.17°C/W
Maximum Lead Temperature (During Soldering, 1/8" from case, 5sec), TL	+275°C

Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle </= 10%.

Electrical Characteristics: (T_C = +25°C unless otherwise specified)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
OFF Characteristics (Note 2)
Collector-Emitter Sustaining Voltage	VCEX(sus)	IC = 250mA, IB = 0, Vclamp = 400V	400	-	-	V
		IC = 1A, Vclamp = 450V, TC = +100°C	450	-	-	V
		IC = 5A, Vclamp = 450V, TC = +100°C	325	-	-	V
Collector Cutoff Current	ICEV	VCEV = 500V, VBE(off) = 1.5V	-	-	0.25	mA
		VCEV = 500V, VBE(off) = 1.5V, TC = +150°C	-	-	0.5	mA
	ICER	VCE = 500V, RBE = 50 Ohm, TC = +100°C	-	-	0.5	mA
Emitter Cutoff Current	IEBO	VEB = 8V, IC = 0	-	-	175	mA
ON Characteristics (Note 2)
DC Current Gain	hFE	IC = 2.5A, VCE = 5V	40	-	500
		IC = 5A, VCE = 5V	30	-	300
Collector-Emitter Saturation Voltage	VCE(sat)	IC = 5A, IB = 250mA	-	-	1.9	V
		IC = 5A, IB = 250mA, TC = +100°C	-	-	2.0	V
		IC = 10A, IB = 1A	-	-	2.9	V
Base-Emitter Saturation Voltage	VBE(sat)	IC = 5.2A, IB = 250mA	-	-	2.5	V
		IC = 5A, IB = 250mA, TC = +100°C	-	-	2.5	V
Diode Forward Voltage	Vf	IF = 5A, Note 3	-	3	5	V
Dynamic Characteristics
Small-Signal Current Gain	hFE	VCE = 10V, IC = 1A, f = 1MHz	10	-	-
Output Capacitance	Cob	VCB = 50V, IE = 0, f = 100kHz	60	-	275	pF
Switching Characteristics (Resistive Load)
Delay Time	td	VCC = 250V, IC = 5A, IB1 = 250mA, VBE(off) = 5V, tp = 50µs, Duty Cycle </= 2%	-	0.05	0.2	µs
Rise Time	tr		-	0.25	0.6	µs
Storage Time	ts		-	0.5	1.5	µs
Fall Time	tf		-	0.06	0.5	µs
Switching Characteristics (Inductive Load, Clamped)
Storage Time	tsv	IC = 5A(pk), Vclamp = 450V, IB1 = 250mA, VBE(off) = 5V, TC = +100°C	-	0.8	2.0	µs
Crossover Time	tc		-	0.6	1.5	µs
Storage Time	tsv	IC = 5A(pk), Vclamp = 450V, IB1 = 250mA, VBE(off) = 5V, TC = +25°C	-	0.5	-	µs
Crossover Time	tc		-	0.3	-	µs

Note 2.	Pulse Test: Pulse Width = 300µs, Duty Cycle </= 2%.
Note 3.	The internal Collector-to-Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.

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