NTE97 NPN Transistor HV Darlington 10A 400V Power Amp TO-3
Info als pdf File
Silicon NPN Transistor
High Voltage Darlington Power Amp, Switch
TO-3
Description:
The NTE97 is a silicon Darlington NPN transistor in a TO3 type package designed for high voltage, high-speed, power switching in inductive circuits where fall time is critical. This device is particularly suited for line-operated switch-mode applications.
Applications:
- Switching Regulators
- Inverters
- Solenoid and Relay Drivers
Absolute Maximum Ratings:
| Collector-Emitter Voltage, VCEO(sus) |
400V |
| Collector-Emitter Voltage, VCEX(sus) |
450V |
| Collector-Emitter Voltage, VCEV |
500V |
| Emitter-Base Voltage, VEB |
8V |
Collector Current, IC
Continuous
Peak (Note 1) |
10A
20A |
Base Current, IB
Continuous
Peak (Note 1) |
2.5A
5.0A |
| Total Device Dissipation (TC = +25°C), PD |
150W |
| Derate above 25°C |
0.86W/°C |
| Total Device Dissipation (TC = +100°C), PD |
100W |
| Operating Junction Temperature Range, TJ |
-65° to +200°C |
| Storage Temperature Range, Tstg |
-65° to +200°C |
| Thermal Resistance, Junction-to-Case, RthJC |
1.17°C/W |
| Maximum Lead Temperature (During Soldering, 1/8" from case, 5sec), TL |
+275°C |
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle </= 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
| Parameter |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Unit |
| OFF Characteristics (Note 2) |
| Collector-Emitter Sustaining Voltage |
VCEX(sus) |
IC = 250mA, IB = 0, Vclamp = 400V |
400 |
- |
- |
V |
| IC = 1A, Vclamp = 450V, TC = +100°C |
450 |
- |
- |
V |
| IC = 5A, Vclamp = 450V, TC = +100°C |
325 |
- |
- |
V |
| Collector Cutoff Current |
ICEV |
VCEV = 500V, VBE(off) = 1.5V |
- |
- |
0.25 |
mA |
| VCEV = 500V, VBE(off) = 1.5V, TC = +150°C |
- |
- |
0.5 |
mA |
| ICER |
VCE = 500V, RBE = 50 Ohm, TC = +100°C |
- |
- |
0.5 |
mA |
| Emitter Cutoff Current |
IEBO |
VEB = 8V, IC = 0 |
- |
- |
175 |
mA |
| ON Characteristics (Note 2) |
| DC Current Gain |
hFE |
IC = 2.5A, VCE = 5V |
40 |
- |
500 |
|
| IC = 5A, VCE = 5V |
30 |
- |
300 |
|
| Collector-Emitter Saturation Voltage |
VCE(sat) |
IC = 5A, IB = 250mA |
- |
- |
1.9 |
V |
| IC = 5A, IB = 250mA, TC = +100°C |
- |
- |
2.0 |
V |
| IC = 10A, IB = 1A |
- |
- |
2.9 |
V |
| Base-Emitter Saturation Voltage |
VBE(sat) |
IC = 5.2A, IB = 250mA |
- |
- |
2.5 |
V |
| IC = 5A, IB = 250mA, TC = +100°C |
- |
- |
2.5 |
V |
| Diode Forward Voltage |
Vf |
IF = 5A, Note 3 |
- |
3 |
5 |
V |
| Dynamic Characteristics |
| Small-Signal Current Gain |
hFE |
VCE = 10V, IC = 1A, f = 1MHz |
10 |
- |
- |
|
| Output Capacitance |
Cob |
VCB = 50V, IE = 0, f = 100kHz |
60 |
- |
275 |
pF |
| Switching Characteristics (Resistive Load) |
| Delay Time |
td |
VCC = 250V, IC = 5A, IB1 = 250mA,
VBE(off) = 5V, tp = 50µs, Duty Cycle </= 2% |
- |
0.05 |
0.2 |
µs |
| Rise Time |
tr |
- |
0.25 |
0.6 |
µs |
| Storage Time |
ts |
- |
0.5 |
1.5 |
µs |
| Fall Time |
tf |
- |
0.06 |
0.5 |
µs |
| Switching Characteristics (Inductive Load, Clamped) |
| Storage Time |
tsv |
IC = 5A(pk), Vclamp = 450V, IB1 = 250mA,
VBE(off) = 5V, TC = +100°C |
- |
0.8 |
2.0 |
µs |
| Crossover Time |
tc |
- |
0.6 |
1.5 |
µs |
| Storage Time |
tsv |
IC = 5A(pk), Vclamp = 450V, IB1 = 250mA,
VBE(off) = 5V, TC = +25°C |
- |
0.5 |
- |
µs |
| Crossover Time |
tc |
- |
0.3 |
- |
µs |
| Note 2. | Pulse Test: Pulse Width = 300µs, Duty Cycle </= 2%. |
| Note 3. | The internal Collector-to-Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers. |
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