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NTE94 Silicon 5A 300V NPN Transistor High Voltage Switch TO-3

Bestell-Nr.: NTE94

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NTE94 Silicon 5A 300V NPN Transistor High Voltage Switch TO-3

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Silicon NPN Transistor High Voltage Switch
TO-3

Description:

The NTE94 is a silicon NPN transistor in a TO3 type package designed for medium to high voltage inverters, converters, regulators, and switching circuits.

Features:

High Collector-Emitter Voltage: V_CEO = 300V
DC Current Gain Specified at 1A and 2.5A
Low Collector-Emitter Saturation Voltage: V_CE(sat) = 0.8V @ 1A

Absolute Maximum Ratings:

Collector-Emitter Voltage, V_CEO	300V
Collector-Base Voltage, V_CB	300V
Emitter-Base Voltage, V_EB	5V
Collector Current, I_C Continuous Peak	5A 10A
Base Current, I_B	2A
Total Device Dissipation (T_C = +75°C), P_D	100W
Derate above 75°C	1.33W/°C
Operating Junction Temperature Range, T_J	-65° to +150°C
Storage Temperature Range, T_stg	-65° to +200°C
Thermal Resistance, Junction-to-Case, R_thJC	0.75°C/W

Electrical Characteristics: (T_C = +75°C unless otherwise specified)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
OFF Characteristics
Collector-Emitter Sustaining Voltage	V_CEO(sus)	I_C = 100mA, I_B = 0	300	-	-	V
Collector Cutoff Current	I_CEO	V_CE = 300V, I_B = 0	-	-	0.25	mA
Collector Cutoff Current	I_CEX	V_CE = 300V, V_BE(off) = 1.5V, T_C = +125°C	-	-	0.5	mA
Emitter Cutoff Current	I_EBO	V_EB = 5V, I_C = 0	-	-	5	mA
ON Characteristics
DC Current Gain	h_FE	I_C = 1A, V_CE = 5V	30	-	90
DC Current Gain	h_FE	I_C = 2.5A, V_CE = 5V	10	-	-
Collector-Emitter Saturation Voltage	V_CE(sat)	I_C = 1A, I_B = 0.1A	-	-	0.8	V
Base-Emitter Saturation Voltage	V_BE(sat)	I_C = 1A, I_B = 0.1A	-	-	1.2	V
Dynamic Characteristics
Current Gain-Bandwidth Product	f_T	V_CE = 10V, I_C = 200mA, f = 1MHz	2.5	-	-	MHz

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