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NTE93 Silicon PNP-Transistor HiFi Power Amplifier Audio Output

Bestell-Nr.: NTE93

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NTE93 Silicon PNP-Transistor HiFi Power Amplifier Audio Output

Info as pdf-file

See also >>> NTE92 (NPN)

Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)

Collector-Base Voltage, V_CBO		200V
Collector-Emitter Voltage, V_CEO		200V
Emitter-Base Voltage, V_EBO		6V
Continuous Collector Current, I_C		15A
Continuous Base Current, I_B		5A
Collector Power Dissipation (T_C = +25°C), P_C		150W
Maximum Operating Junction Temperature, T_Jmax		+150°C
Storage Temperature Range, T_stg		-55° to +150°C

Note 1.

Matched complementary pairs are available upon request (NTE93MCP). Matched complementary pairs have their gain specifications (h_FE) matched to within 10% of each other.

Electrical Characteristics: (T_A = +25°C unless otherwise specified)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Emitter Breakdown Voltage	V_(BR)CEO	I_C = 50mA	200	-	-	V
Collector Cutoff Current	I_CBO	V_CB = 200V	-	-	0.1	mA
Emitter Cutoff Current	I_EBO	V_EB = 6V	-	-	0.1	mA
DC Current Gain	h_FE	I_C = 5A, V_CE = 4V	30	120	-
Collector-Emitter Saturation Voltage	V_CE(sat)	I_C = 10A, I_B = 1A	-	-	3.0	V
Transition Frequency	f_T	V_CE = 12V, I_E = 0.5A	-	20	-	MHz

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NTE has one of the most extensive semiconductor lines in the industry. All NTE semiconductors are guaranteed to meet or exceed original specifications. Sprachen integrierter Schaltkreis integrated circuit, kurz IC, Mikrochip Microchip integreret kredsløb integreret kredslob circuito integrado (CI) circuit intégré (CI) circuit integre (CI) circuito integrato geïntegreerde schakeling geintegreerde schakeling Tümdevre Tuemdevre EEE