NTE906 Dual High-Frequency Differential Amplifier TO-5 (12-Pin)

Info as pdf-file

Description:

The NTE906 is an integrated circuit in a 12-Lead TO5 type package consisting of two independent differential amplifiers with associated constant-current transistors on a common monolithic substrate. The six transistors which comprise the amplifiers are general-purpose devices which exhibit low 1/f noise and a gain-bandwidth product in excess of 1GHz. These features make the NTE906 useful from DC to 500MHz. Bias and load resistors have been omitted to provide maximum application flexibility.

The monolithic construction of the NTE906 provides close electrical and thermal matching of the amplifiers. This feature makes this device particularly useful in dual-channel applications where matched performance of the two channels is required.

Features:

• Power Gain:  23dB (Typ) @ 200MHz
• Noise Figure:  4.6dB (Typ) @ 200MHz
• Two Different Amplifiers on a Common Substrate
• Independently Accessible Input and Output

Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)

Collector-Emitter Voltage (Each Transistor), VCEO		15V
Collector-Base Voltage (Each Transistor), VCBO		20V
Collector-Substrate Voltage (Each Transistor, Note 1), VCIO		20V
Emitter-Base Voltage (Each Transistor), VEBO		5V
Collector Current (Each Transistor), IC		50mA
Power Dissipation, PD
Any One Transistor		300mW
Total Package		600mW
Derate Above 55°C		5mW/°C
Operating Temperature Range, Topr		-55°C to +125°C
Storage Temperature Range, Tstg		-65°C to +200°C

Note 1.

The collector of each transistor is isolated from the substrate by an integral diode. The substrate (Pin9) must be connected to the most negative point in the external circuit to maintain isolation betwen transistors and to provide for normal transistor action.

Electrical Characteristics: (T_A = +25°C, V_CC = ±12V, Note 1 unless otherwise specified)

Parameter	Symbol	Test Conditions		Min	Typ	Max	Units
Static Characteristics (For Each Differential Amplifier)
Input Offset Voltage	VIO			-	0.25	-	mV
Input Offset Current	IIO	I3 = I9 = 2mA		-	0.3	-	µA
Input Bias Current	IIB			-	13.5	33	µA
Temperature Coefficient Magnitude of Input-Offset Voltage				-	1.1	-	µV / °C
Static Characteristics (For Each Transistor)
DC Forward Base-Emitter Voltage	VBE	VCE = 6V, IC = 1mA		-	774	-	mV
Temperature Coefficient of Base-Emitter Voltage		VCE = 6V, IC = 1mA		-	-0.9	-	mV / °C
Collector Cutoff Current	ICBO	VCB = 10V, IE = 0		-	0.0013	100	nA
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC = 1mA, IB = 0		15	24	-	V
Collector-Substrate Breakdown Voltage	V(BR)CIO	IC = 10µA, IB = 0, IE = 0		20	60	-	V
Emitter-Base Breakdown Voltage	V(BR)EBO	IE = 10µA, IC = 0		5	7	-	V
Dynamic Characteristics (For Single Transistor)
1/f Noise Figure	NF	IC = 1mA, f = 100kHz, RS = 500 Ohms		-	1.5	-	dB
Gain-Bandwidth Product	fT	VCE = 6V, IC = 5mA		-	1.38	-	GHz
Collector-Base Capacitance	CCB	VCB = 5V, IC = 0	Note 2	-	0.28	-	pF
			Note 3	-	0.28	-	pF
Collector-Substrate Capacitance	CCI	VCI = 5V, IC = 0		-	1.65	-	GHz
Dynamic Characteristics (For Each Differential Amplifier)
Common-Mode Rejection Ratio	CMRR	I3 = I9 = 2mA		-	100	-	dB
AGC Range, One Stage	AGC	Bias Voltage = -6V		-	100	-	dB
Voltage Gain, Single-Ended Output	A	Bias Voltage = -4.2V, f = 10MHz		-	22	-	dB
Insertion Power Gain	GP	VCC = 12V, f = 200MHz For Cascode Configuration:  I3 = I9 = 2mA For Diff. Amp Configuration:  I3 = I9 = 4mA (Each Collector IC = 2mA)	Cascode	-	23	-	dB
Noise Figure	NF		Cascode	-	4.6	-	dB
Input Admittance	Y11		Cascode	-	1.5+j2.45	-	mmho
			Diff. Amp	-	0.878+j1.3	-	mmho
Reverse Transfer Admittance	Y12		Cascode	-	0-j0.008	-	mmho
			Diff. Amp	-	0-j0.013	-	mmho
Forward Transfer Admittance	Y21		Cascode	-	17.9-j30.7	-	mmho
			Diff. Amp	-	-10.5+j13	-	mmho
Output Admittance	Y22		Cascode	-	-0.503-j15	-	mmho
			Diff. Amp	-	0.071+j0.62	-	mmho

Note 2.	Pin1 & Pin12 or Pin6 & Pin7
Note 3.	Pin10 & Pin11 or Pin4 & Pin5

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