NTE88MP (Matched Pair) Silicon NPN/PNP Transistors 10A 250V High Power Audio Disk Head Positioner for Linear Applications TO-3
Info as pdf-file
Matched pairs have their gain specification (hFE) matched to within 10% of each other.
See also >>> NTE87 (NPN)
See also >>> NTE88 (PNP)
Description:
The NTE87 (NPN) and NTE88 (PNP) are silicon complementary transistors in a TO3 type case designed for high-power audio, disk head positioners, and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DC-to-DC converters, or inverters.
Features:
- High Safe Operating Area
- Completely Characterized for Linear Operartion
- High DC Current Gain and Low Saturation Voltage
- For Low Distortion Complementary Designs
Absolute Maximum Ratings:
| Collector-Emitter Voltage, VCEO |
250V |
| Collector-Emitter Voltage, VCEX |
250V |
| Emitter-Base Voltage, VEBO |
5V |
Collector Current, IC
Continuous
Peak (Note 1) |
10A
15A |
Base Current, IB
Continuous
Peak (Note 1) |
2A
5A |
Emitter Current, IE
Continuous
Peak (Note 1) |
12A
20A |
| Total Device Dissipation (TC = +25°C), PD |
200W |
| Derate above 25°C |
1.14W/°C |
| Operating Junction Temperature Range, TJ |
-65° to +200°C |
| Storage Temperature Range, Tstg |
-65° to +200°C |
| Thermal Resistance, Junction-to-Case, RthJC |
0.875°C/W |
| Maximum Lead Temperature (During Soldering), TL |
+265°C |
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle < 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
| Parameter |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Unit |
| OFF Characteristics |
| Collector-Emitter Breakdown Voltage |
V(BR)CEO |
IC = 100mA, Note 2 |
250 |
- |
- |
V |
| Collector Cutoff Current |
ICEO |
VCE = 200V |
- |
- |
1 |
mA |
| ICEX |
VCE = 250V, VEB(off) = 1.5V |
- |
- |
500 |
µA |
| Emitter Cutoff Current |
IEBO |
VBE = 5V |
- |
- |
500 |
µA |
| ON Characteristics (Note 2) |
| DC Current Gain |
hFE |
IC = 2A, VCE = 2V |
20 |
- |
100 |
|
| IC = 4A, VCE = 2V |
5 |
- |
- |
|
| Collector-Emitter Saturation Voltage |
VCE(sat) |
IC = 2A, IB = 0.2A |
- |
- |
0.8 |
V |
| IC = 4A, IB = 0.4A |
- |
- |
2.5 |
V |
| Base-Emitter ON Voltage |
VBE(on) |
IC = 4A, VCE = 2V |
- |
- |
2 |
V |
| Dynamic Characteristics |
| Output Capacitance |
Cob |
VCB = 10V, f = 1MHz |
- |
- |
750 |
pF |
| Second Breakdown |
| Second Breakdown Collector Current with Base Forward Biased |
IS/b |
VCE = 40V, t = 0.5s |
5 |
- |
- |
A |
| VCE = 100V, t = 0.5s |
1.4 |
- |
- |
A |
Note 2. Pulse Test: Pulse Width
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