NTE88 Silicon PNP Transistors 10A 250V High Power Audio Disk Head Positioner for Linear Applications TO-3
Info als pdf File
See also >>> NTE87 (NPN)
See also >>> NTE88MP (Matched Pair)
Description:
The NTE87 (NPN) and NTE88 (PNP) are silicon complementary transistors in a TO3 type case designed for high-power audio, disk head positioners, and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DC-to-DC converters, or inverters.
Features:
- High Safe Operating Area
- Completely Characterized for Linear Operartion
- High DC Current Gain and Low Saturation Voltage
- For Low Distortion Complementary Designs
Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO |
250V |
Collector-Emitter Voltage, VCEX |
250V |
Emitter-Base Voltage, VEBO |
5V |
Collector Current, IC
Continuous Peak (Note 1) |
10A 15A |
Base Current, IB
Continuous Peak (Note 1) |
2A 5A |
Emitter Current, IE
Continuous Peak (Note 1) |
12A 20A |
Total Device Dissipation (TC = +25°C), PD |
200W |
Derate above 25°C |
1.14W/°C |
Operating Junction Temperature Range, TJ |
-65° to +200°C |
Storage Temperature Range, Tstg |
-65° to +200°C |
Thermal Resistance, Junction-to-Case, RthJC |
0.875°C/W |
Maximum Lead Temperature (During Soldering), TL |
+265°C |
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle < 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Unit |
OFF Characteristics |
Collector-Emitter Breakdown Voltage |
V(BR)CEO |
IC = 100mA, Note 2 |
250 |
- |
- |
V |
Collector Cutoff Current |
ICEO |
VCE = 200V |
- |
- |
1 |
mA |
ICEX |
VCE = 250V, VEB(off) = 1.5V |
- |
- |
500 |
µA |
Emitter Cutoff Current |
IEBO |
VBE = 5V |
- |
- |
500 |
µA |
ON Characteristics (Note 2) |
DC Current Gain |
hFE |
IC = 2A, VCE = 2V |
20 |
- |
100 |
|
IC = 4A, VCE = 2V |
5 |
- |
- |
|
Collector-Emitter Saturation Voltage |
VCE(sat) |
IC = 2A, IB = 0.2A |
- |
- |
0.8 |
V |
IC = 4A, IB = 0.4A |
- |
- |
2.5 |
V |
Base-Emitter ON Voltage |
VBE(on) |
IC = 4A, VCE = 2V |
- |
- |
2 |
V |
Dynamic Characteristics |
Output Capacitance |
Cob |
VCB = 10V, f = 1MHz |
- |
- |
750 |
pF |
Second Breakdown |
Second Breakdown Collector Current with Base Forward Biased |
IS/b |
VCE = 40V, t = 0.5s |
5 |
- |
- |
A |
VCE = 100V, t = 0.5s |
1.4 |
- |
- |
A |
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%.
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