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NTE85 Si NPN Transistor 0.5A 30V General Purpose Amplifier TO-92

Bestell-Nr.:    NTE85


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NTE85 Silicon NPN Transistor 0.5A 30V General Purpose Amplifier TO-92

Info as pdf-file

Applications:

  • Medium Power Amplifiers
  • Class B Audio Outputs
  • Hi-Fi Drivers
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified
Collector-Base Voltage, VCBO 50V
Collector-Emitter Voltage, VCEO 30V
Emitter-Base Voltage, VEBO 5V
Continuous Collector Current, IC 500mA
Total Device Dissipation (TA = +25°C), PD 625mW
            Derate above 25°C 5.0mW/°C
Operating Junction Temperature Range, TJ -55° to +150°C
Storage Temperature Range, Tstg -55° to +150°C
Thermal Resistance, Junction-to-Case, RthJC 83.3°C/W
Thermal Resistance, Junction-to-Ambient, RthJA 200°C/W
Note 1.These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
Note 2.These ratings are based on a maximum junction temperature of 150°C.

Electrical Characteristics:(TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0, Note 3 30 - - V
Collector-Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0 50 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 5.0 - - V
Collector Cutoff Current ICBO VCB = 20V, IE = 0 - - 100 nA
Emitter Cutoff Current IEBO VBE = 3V, IC = 0 - - 100 nA
DC Current Gain hFE VCE = 2V, IC = 50mA, Note 3 100 - 300 -
Base Emitter ON Voltage VBE(on) VCE = 2V, IC = 100mA, Note 3 0.5 - 1.0 V
Collector Emitter Saturation Voltage VCE(sat) IC = 100mA, IB = 5mA, Note 3 - - 600 mV
Current Gain-Bandwidth Product fT VCE = 2V, IC = 50mA 100 - - MHz
Collector-Base Capacitance Ccb VCB = 10V, IE = 0, f = 1MHz - - 12 pF
Note 3.Pulse test:  Pulse Width </= 300µs, Duty Cycle </= 2%.



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