NTE81 Silicon NPN Transistor 0.5A 30V Dual Differential Amplifier General Purpose Switch TO-78
Info as pdf-file
Absolute Maximum Ratings:
| Collector-Base Voltage, VCBO |
60V |
| Collector-Emitter Voltage, VCEO |
30V |
| Emitter-Base Voltage, VEBO |
5V |
| Continuous Collector Current, IC |
500mA |
| Total Device Dissipation (TA = +25°C), PD |
|
One Die
All Die Equal Power |
575mW
625mW |
Derate Above 25°C
One Die
All Die Equal Power |
3.29mW/°C
3.57mW/°C |
| Total Device Dissipation (TC = +25°C), PD |
|
One Die
All Die Equal Power |
1.8W
2.5W |
Derate Above 25°C
One Die
All Die Equal Power |
10.3mW/°C
14.3mW/°C |
| Operating Junction Temperature Range, TJ |
-65° to +200°C |
| Storage Temperature Range, Tstg |
-65° to +200°C |
Thermal Resistance, Junction-to-Ambient (Note 1), RthJA
One Die
All Die Equal Power |
304°C/W
280°C/W |
Thermal Resistance, Junction-to-Case, RthJC
One Die
All Die Equal Power |
97°C/W
70°C/W |
Coupling Factors
Q1-Q2
Junction-to-Ambient
Junction-to-Case |
57%
0% |
Q1-Q3 or Q1-Q4
Junction-to-Ambient
Junction-to-Case |
55%
0% |
| Note 1. | RthJA is measured with the device soldered into a typical printed circuit board. |
Electrical Characteristics: (TA = +25°C unless otherwise specified)
| Parameter |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Unit |
| OFF Characteristics |
| Collector-Emitter Breakdown Voltage |
V(BR)CEO |
IC = 10mA, IB = 0, Note 2 |
30 |
- |
- |
V |
| Collector-Base Breakdown Voltage |
V(BR)CBO |
IC = 10µA, IE = 0 |
60 |
- |
- |
V |
| Emitter-Base Breakdown Voltage |
V(BR)EBO |
IE = 10µA, IC = 0 |
5 |
- |
- |
V |
| Collector Cutoff Current |
ICEV |
VCE = 50V, VBE(off) = 3V |
15 |
- |
- |
nA |
| Base Cutoff Current |
IBL |
VCE = 50V, VEB(off) = 3V |
30 |
- |
- |
nA |
| ON Characteristics (Note 1) |
| DC Current Gain |
hFE |
VCE = 10V, IC = 0.1mA |
20 |
50 |
- |
|
| VCE = 10V, IC = 1.0mA |
25 |
55 |
- |
|
| VCE = 10V, IC = 10mA |
35 |
65 |
- |
|
| VCE = 1.0V, IC = 150mA |
20 |
65 |
- |
|
| VCE = 10V, IC = 150mA |
40 |
30 |
120 |
|
| VCE = 10V, IC = 300mA |
25 |
75 |
- |
|
| Collector-Emitter Saturation Voltage |
VCE(sat) |
IC = 150mA, IB = 15mA |
- |
0.2 |
0.4 |
V |
| IC = 300mA, IB = 30mA |
- |
0.35 |
1.2 |
V |
| Base-Emitter Saturation Voltage |
VBE(sat) |
IC = 150mA, IB = 15mA |
0.6 |
0.95 |
1.3 |
V |
| IC = 300mA, IB = 30mA |
- |
- |
2.0 |
V |
| Small-Signal Characteristics |
| Current Gain-Bandwidth Product |
fT |
VCE = 20V, IC = 20mA, f = 100MHz |
200 |
250 |
- |
MHz |
| Output Capacitance |
Cobo |
VCB = 10V, IE = 0, f = 100kHz |
- |
3.5 |
8.0 |
pF |
| Input Capacitance |
Cibo |
VEB = 0.5V, IC = 0, f = 100kHz |
- |
15 |
20 |
pF |
| Switching Characteristics |
| Delay Time |
td |
VCC = 30V, VEB(off) = 0.5V, IC = 150mA, IB1 = 15mA |
- |
- |
15 |
µs |
| Rise Time |
tr |
- |
- |
30 |
µs |
| Storage Time |
ts |
VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA |
- |
- |
250 |
µs |
| Fall Time |
tf |
- |
- |
60 |
µs |
| Note 2. | Pulse Test: Pulse Width </= 300µs, Duty Cycle </= 2%. |
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