NTE858SM Dual Low-Noise JFET-Input Operational Amplifier SOIC-8
Info as pdf-file
See also >>> NTE858M
Description:
The NTE858M and NTE858SM are dual, low-noise JFET input operational amplifiers combining two state-of-the-art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input offset voltage. The BIFET technology provides wide bandwidths and fast slew rates with low input bias currents, input offset currents, and supply currents. Moreover, these devices exhibit low-noise and low harmonic distortion making them ideal for use in high-fidelity audio applications.
Features:
- Low Input Noise Voltage
- Low Harmonic Distortion
- Low Input Bias and Offset Currents
- High Input Impedance
- High Slew Rate
- Wide Gain Bandwidth
- LOw Supply Current
- Available in 8-Lead Mini DIP (NTE858M) and Surface Mount SOIC-8 (NTE858SM)
Absolute Maximum Ratings:
Supply Voltage, VCC |
|
+18V |
Supply Voltage, VEE |
|
-18V |
Differential Input Voltage, VID |
|
±30V |
Input Voltage Range (Note 1), VIDR |
|
±15V |
Output Short-Circuit Duration (Note 2), tS |
|
Continuous |
Power Dissipation, PD |
|
680mW |
Derate Above +47°C |
|
10mW/°C |
Operating Ambient Temperature Range, TA |
|
0°C to +70°C |
Storage Temperature Range, Tstg |
|
-65°C to +150°C |
Note 1. | The magnitude of the input voltage must not exceed the magnitude of the supply voltage or 15V, whichever is less. |
Note 2. | The output may be shorted to GND or either supply. Temperature and/or supply voltages must be limited to ensure that power dissipation ratings are not exceeded. |
Electrical Characteristics: (VCC = +15V, VEE = -15V, TA = +25°C, unless otherwise specified)
Parameter |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Units |
Input Offset Voltage |
VIO |
RS = 10k Ohm, VCM = 0 |
|
- |
3 |
10 |
mV |
TA = 0° to +70°C |
- |
- |
13 |
mV |
Average Temperature Coefficient of Input Offset Voltage |
VIO/T |
TA = 0° to +70°C |
- |
10 |
- |
µV/°C |
Input Offset Current |
IIO |
VCM = 0, Note 3 |
|
- |
5 |
50 |
pA |
TA = 0° to +70°C |
- |
- |
2 |
nA |
Input Bias Current |
IIB |
VCM = 0, Note 3 |
|
- |
30 |
200 |
pA |
TA = 0° to +70°C |
- |
- |
7 |
nA |
Input Resistance |
ri |
|
- |
1012 |
- |
Ohm |
Common Mode Input Voltage Range |
VICR |
|
±10 |
+15, -12 |
- |
V |
Large-Signal Voltage Gain |
AVOL |
VO = ±10V, RL = 2k Ohm |
|
25 |
150 |
- |
V/mV |
TA = 0° to +70°C |
15 |
- |
- |
V/mV |
Output Voltage Swing (Peak-to-Peak) |
VO |
RL = 10k Ohm |
|
24 |
28 |
- |
V |
RL >/= 10k Ohm |
TA = 0° to +70°C |
24 |
- |
- |
V |
RL >/= 2k Ohm |
20 |
- |
- |
V |
Common Mode Rejection Ratio |
CMRR |
RS = 10k Ohm |
70 |
100 |
- |
dB |
Supply Voltage Rejection Ratio |
PSRR |
RS = 10k Ohm |
70 |
100 |
- |
dB |
Supply Current (Each Amplifier) |
ID |
|
- |
1.4 |
2.5 |
mA |
Unity Gain Bandwidth |
BW |
|
- |
4 |
- |
MHz |
Slew Rate |
SR |
VIN = 10V, RL = 2k Ohm, CL = 100pF |
- |
13 |
- |
V/µs |
Rise Time |
tr |
|
- |
0.1 |
- |
µs |
Overshoot factor |
|
VIN = 20mV, RL = 2k Ohm, CL = 100pF |
- |
10 |
- |
% |
Equivalent Input Noise Voltage |
en |
RS = 100 Ohm, f = 1000Hz |
- |
18 |
- |
nV/(Sq Rt)Hz |
Equivalent Input Noise Current |
in |
RS = 100 Ohm, f = 1000Hz |
- |
0.01 |
- |
pA/(Sq Rt)Hz |
Total Harmonic Distortion |
THD |
VO(rms) = 10V, RS = 1k Ohm, RL >/= 2k Ohm, f = 1000Hz |
- |
0.01 |
- |
% |
Channel Separation |
|
AV = 100 |
- |
120 |
- |
dB |
Note 3. | Input bias currents of JFET input operational amplifiers approximately double for every 10°C rise in junction temperature. To maintain junction temperature as close to ambient temperature as possible, pulse techniques must be used during test. |
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