NTE81 Silicon NPN Transistor 0.5A 30V Dual Differential Amplifier General Purpose Switch TO-78
Info as pdf-file
Absolute Maximum Ratings:
Collector-Base Voltage, VCBO |
60V |
Collector-Emitter Voltage, VCEO |
30V |
Emitter-Base Voltage, VEBO |
5V |
Continuous Collector Current, IC |
500mA |
Total Device Dissipation (TA = +25°C), PD |
|
One Die All Die Equal Power |
575mW 625mW |
Derate Above 25°C One Die All Die Equal Power |
3.29mW/°C 3.57mW/°C |
Total Device Dissipation (TC = +25°C), PD |
|
One Die All Die Equal Power |
1.8W 2.5W |
Derate Above 25°C One Die All Die Equal Power |
10.3mW/°C 14.3mW/°C |
Operating Junction Temperature Range, TJ |
-65° to +200°C |
Storage Temperature Range, Tstg |
-65° to +200°C |
Thermal Resistance, Junction-to-Ambient (Note 1), RthJA One Die All Die Equal Power |
304°C/W 280°C/W |
Thermal Resistance, Junction-to-Case, RthJC One Die All Die Equal Power |
97°C/W 70°C/W |
Coupling Factors Q1-Q2 Junction-to-Ambient Junction-to-Case |
57% 0% |
Q1-Q3 or Q1-Q4 Junction-to-Ambient Junction-to-Case |
55% 0% |
Note 1. | RthJA is measured with the device soldered into a typical printed circuit board. |
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Unit |
OFF Characteristics |
Collector-Emitter Breakdown Voltage |
V(BR)CEO |
IC = 10mA, IB = 0, Note 2 |
30 |
- |
- |
V |
Collector-Base Breakdown Voltage |
V(BR)CBO |
IC = 10µA, IE = 0 |
60 |
- |
- |
V |
Emitter-Base Breakdown Voltage |
V(BR)EBO |
IE = 10µA, IC = 0 |
5 |
- |
- |
V |
Collector Cutoff Current |
ICEV |
VCE = 50V, VBE(off) = 3V |
15 |
- |
- |
nA |
Base Cutoff Current |
IBL |
VCE = 50V, VEB(off) = 3V |
30 |
- |
- |
nA |
ON Characteristics (Note 1) |
DC Current Gain |
hFE |
VCE = 10V, IC = 0.1mA |
20 |
50 |
- |
|
VCE = 10V, IC = 1.0mA |
25 |
55 |
- |
|
VCE = 10V, IC = 10mA |
35 |
65 |
- |
|
VCE = 1.0V, IC = 150mA |
20 |
65 |
- |
|
VCE = 10V, IC = 150mA |
40 |
30 |
120 |
|
VCE = 10V, IC = 300mA |
25 |
75 |
- |
|
Collector-Emitter Saturation Voltage |
VCE(sat) |
IC = 150mA, IB = 15mA |
- |
0.2 |
0.4 |
V |
IC = 300mA, IB = 30mA |
- |
0.35 |
1.2 |
V |
Base-Emitter Saturation Voltage |
VBE(sat) |
IC = 150mA, IB = 15mA |
0.6 |
0.95 |
1.3 |
V |
IC = 300mA, IB = 30mA |
- |
- |
2.0 |
V |
Small-Signal Characteristics |
Current Gain-Bandwidth Product |
fT |
VCE = 20V, IC = 20mA, f = 100MHz |
200 |
250 |
- |
MHz |
Output Capacitance |
Cobo |
VCB = 10V, IE = 0, f = 100kHz |
- |
3.5 |
8.0 |
pF |
Input Capacitance |
Cibo |
VEB = 0.5V, IC = 0, f = 100kHz |
- |
15 |
20 |
pF |
Switching Characteristics |
Delay Time |
td |
VCC = 30V, VEB(off) = 0.5V, IC = 150mA, IB1 = 15mA |
- |
- |
15 |
µs |
Rise Time |
tr |
- |
- |
30 |
µs |
Storage Time |
ts |
VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA |
- |
- |
250 |
µs |
Fall Time |
tf |
- |
- |
60 |
µs |
Note 2. | Pulse Test: Pulse Width </= 300µs, Duty Cycle </= 2%. |
Pictures are a guide only actual product may vary. Subject to alterations and errors. Help us to eliminate errors:
Please report any errors here.
Are you searching for replacements of semiconductors?
The following link brings you to the search window of NTE Electronics (a world wide supplier of high quality electronic components). This QUICKCross software can assist users in selecting the proper NTE replacement device.
QUICKCross Search Engine for NTE Replacement Semiconductors
Our Assortment of NTE- Replacement Devices
Note about NTE replacement devices (formerly ECG Philips and Sylvania):
NTE has one of the most extensive semiconductor lines in the industry. All NTE semiconductors are guaranteed to meet or exceed original specifications.
Sprachen integrierter Schaltkreis integrated circuit, kurz IC, Mikrochip Microchip integreret kredsløb integreret kredslob circuito integrado (CI) circuit intégré (CI) circuit integre (CI) circuito integrato geïntegreerde schakeling geintegreerde schakeling Tümdevre Tuemdevre EEE