17.70CHF 

NTE784 IC 1W Multi-Purpose Wide-Band Power Amplifier 12-Pin Can

Bestell-Nr.:    NTE784


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NTE784 IC 1W Multi-Purpose Wide-Band Power Amplifier 12-Lead Metal Can

Formerly: ECG784

Integrated Circuit Wide-Band Power Amplifier


Description:

The NTE784 is a multi-stage, multi-purpose, wide-band power amplifier on a single monolithic silicon chip. This device employs a highly versatile and stable direct-coupled circuit configuration featuring wide frequency range, high voltage and power gain, and high power output. These features plus inherent stability over a wide temperature range make the NTE784 extremely useful for a wide variety of applications in military, industrial, and commercial equipment.

The NTE784 is particularly suited for service as a class B power amplifier and can provide a maximum power output of 1W from a 12V DC supply with a typical power gain of 75dB.

Features:

  • High Power Output
  • Wide Frequency Range
  • High Power Gain
  • Single Power Supply for Class B Operation with Transformer
  • Built-In Temperature Tracking Voltage RTegulator Provides Stable Operation

Applications:

  • AF Power Amplifier for Portable and Fixed Sound and Communications Systems
  • Servo-Control Amplifier
  • Wide-Band Linear Mixers
  • Video Power Amplifiers
  • Transmission-Line Driver Amplifier (Balanced and Unbalanced)
  • Fan0In and Fan-Out Amplifiers for Computer Logic Circuits
  • Lamp-Control Amplifiers
  • Motor-Control Amplifiers
  • Power Multivibrators
  • Power Switches
Absolute Maximum Ratings:
Power Dissipation (Without Heatsink, TA = +25°C), PD     1W
            Derate Above 25°C     6.7mW/°C
Power Dissipation (With Heatsink, TC = +25°C), PD     2W
            Derate Above 25°C     16.7mW/°C
Operating Temperature Range, Topr     -55° to +125°C
Storage Temperature Range, Tstg     -65° to +150°C
Maximum Thermal Resistance, Junction-to-Case, RthJC     60°C/W

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Emitter Breakdown Voltage V(BR)CER (Q6 & Q7) IC = 10mA 25 - - V
V(BR)CE0 (Q1) IC = 0.1mA 10 - - V
Idle Currents I4, I7 (Q6 & Q7) VCC1 = 9V, VCC2 = 2V - 5.5 - mA
Peak Output Currents I4, I7 (Q6 & Q7) VCC1 = 9V, VCC2 = 2V 180 - - mA
Cutoff Currents I4, I7 (Q6 & Q7) VCC1 = 9V, VCC2 = 2V - - 1.0 mA
Differential Amplifier Current Drain ICC1 VCC1 = 9V, VCC2 = 9V 6.3 9.4 12.5 mA
Total Current Drain ICC1 + ICC2 VCC1 = 9V, VCC2 = 9V 14.5 21.5 30.0 mA
Differential Amplifier Input Pin Voltages V2, V3 VCC1 = 9V, VCC2 = 2V - 11.1 - V
Regulator Pin Voltage V11 VCC1 = 9V, VCC2 = 2V - 2.35 - V
Collector-Emitter Cutoff Current ICEO (Q) VCC1 = 10V - - 100 µA
Emitter-Base Cutoff Current IEBO (Q) VCC1 = 3V - - 0.1 µA
Collector-Base Cutoff Current ICBO (Q) VCC1 = 3V - - 0.1 µA
Forward Current Transfer Ratio hFE1 (Q1) IC = 3mA, VCC1 = 6V 30 75 -  
Bandwidth BW VCC1 = 6V, VCC2 = 6V, -3dB - 8 - MHz
Maximum Power Output PO(max) VCC1 = 6V, VCC2 = 6V, RCC = 130 Ohm 200 300 - mW
VCC1 = 9V, VCC2 = 9V, RCC = 130 Ohm 400 550 - mW
VCC1 = 9V, VCC2 = 12V, RCC = 200 Ohm 800 1000 - mW
Sensitivity eIN VCC1 = 9V, VCC2 = 12V, POUT = 800mW, RCC = 200 Ohm - 50 100 mV
Input Resistance RIN3 VCC1 = 6V, VCC2 = 6V, Pin3 to GND - 1000 - Ohm



This product is discontinued.
Only while stock lasts.


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