17.70CHF 

NTE784 IC Wide-Band Power Amplifier

Bestell-Nr.:    NTE784


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NTE784 IC 1W Multi-Purpose Wide-Band Power Amplifier 12-Lead Metal Can

Formerly: ECG784

Integrated Circuit Wide-Band Power Amplifier


Description:

The NTE784 is a multi-stage, multi-purpose, wide-band power amplifier on a single monolithic silicon chip. This device employs a highly versatile and stable direct-coupled circuit configuration featuring wide frequency range, high voltage and power gain, and high power output. These features plus inherent stability over a wide temperature range make the NTE784 extremely useful for a wide variety of applications in military, industrial, and commercial equipment.

The NTE784 is particularly suited for service as a class B power amplifier and can provide a maximum power output of 1W from a 12V DC supply with a typical power gain of 75dB.

Features:

  • High Power Output
  • Wide Frequency Range
  • High Power Gain
  • Single Power Supply for Class B Operation with Transformer
  • Built-In Temperature Tracking Voltage RTegulator Provides Stable Operation

Applications:

  • AF Power Amplifier for Portable and Fixed Sound and Communications Systems
  • Servo-Control Amplifier
  • Wide-Band Linear Mixers
  • Video Power Amplifiers
  • Transmission-Line Driver Amplifier (Balanced and Unbalanced)
  • Fan0In and Fan-Out Amplifiers for Computer Logic Circuits
  • Lamp-Control Amplifiers
  • Motor-Control Amplifiers
  • Power Multivibrators
  • Power Switches
Absolute Maximum Ratings:
Power Dissipation (Without Heatsink, TA = +25°C), PD     1W
            Derate Above 25°C     6.7mW/°C
Power Dissipation (With Heatsink, TC = +25°C), PD     2W
            Derate Above 25°C     16.7mW/°C
Operating Temperature Range, Topr     -55° to +125°C
Storage Temperature Range, Tstg     -65° to +150°C
Maximum Thermal Resistance, Junction-to-Case, RthJC     60°C/W

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Emitter Breakdown Voltage V(BR)CER (Q6 & Q7) IC = 10mA 25 - - V
V(BR)CE0 (Q1) IC = 0.1mA 10 - - V
Idle Currents I4, I7 (Q6 & Q7) VCC1 = 9V, VCC2 = 2V - 5.5 - mA
Peak Output Currents I4, I7 (Q6 & Q7) VCC1 = 9V, VCC2 = 2V 180 - - mA
Cutoff Currents I4, I7 (Q6 & Q7) VCC1 = 9V, VCC2 = 2V - - 1.0 mA
Differential Amplifier Current Drain ICC1 VCC1 = 9V, VCC2 = 9V 6.3 9.4 12.5 mA
Total Current Drain ICC1 + ICC2 VCC1 = 9V, VCC2 = 9V 14.5 21.5 30.0 mA
Differential Amplifier Input Pin Voltages V2, V3 VCC1 = 9V, VCC2 = 2V - 11.1 - V
Regulator Pin Voltage V11 VCC1 = 9V, VCC2 = 2V - 2.35 - V
Collector-Emitter Cutoff Current ICEO (Q) VCC1 = 10V - - 100 µA
Emitter-Base Cutoff Current IEBO (Q) VCC1 = 3V - - 0.1 µA
Collector-Base Cutoff Current ICBO (Q) VCC1 = 3V - - 0.1 µA
Forward Current Transfer Ratio hFE1 (Q1) IC = 3mA, VCC1 = 6V 30 75 -  
Bandwidth BW VCC1 = 6V, VCC2 = 6V, -3dB - 8 - MHz
Maximum Power Output PO(max) VCC1 = 6V, VCC2 = 6V, RCC = 130 Ohm 200 300 - mW
VCC1 = 9V, VCC2 = 9V, RCC = 130 Ohm 400 550 - mW
VCC1 = 9V, VCC2 = 12V, RCC = 200 Ohm 800 1000 - mW
Sensitivity eIN VCC1 = 9V, VCC2 = 12V, POUT = 800mW, RCC = 200 Ohm - 50 100 mV
Input Resistance RIN3 VCC1 = 6V, VCC2 = 6V, Pin3 to GND - 1000 - Ohm



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NTE-ECG replacement list as pdf-file
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Anmerkung zu den NTE/ECG Austauschhalbleiter:
NTE-Austauschhalbleiter (früher ECG Philips und Sylvania) sind sorgfältig ausgesuchte und erprobte Halbleiter, die einen sicheren Ersatz für Originaltypen verschiedenster Hersteller und Ursprünge für fast alle Applikationsbereiche im Wartungsdienst bieten.
Alle NTE-Austausch-Halbleiter sind einzeln in durchsichtigen Plastikbeuteln verpackt, auf welchen die wichtigsten Daten vermerkt sind.

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