NTE77 Si NPN Transistor 0.4A 30V Broadband CATV Driver TO-39
Info als pdf File
Description:
The NTE77 is an silicon NPN transistor in a TO39 type package designed to be utilized in broadband and linear amplifier circuitry requiring low noise and low intermodulation distortion. This device is suitable for use in CATV driver stages in trunk line, bridger, and line extender amplifiers.
Features:
- High Gain-Bandwidth Product: fT = 1.5GHz Typ
- Low Intermodulation, Low Cross-Modulation Distortion: X-MOD = -57dB
- Low Noise Figure: NF = 2.7dB Typ
- Low Output Capacitance: Cob = 3.5pF Max @ VCB = 30V
Absolute Maximum Ratings: (T
A = +25°C unless otherwise specified)
| Collector-Base Voltage, VCBO |
50V |
| Collector-Emitter Voltage, VCEO |
30V |
| Emitter-Base Voltage, VEBO |
5V |
| Maximum Collector Current, IC |
400mA |
| Total Device Dissipation (TA = +25°C), Ptot |
3.5W |
| Junction Temperature, TJ |
+200°C |
| Storage Temperature Range, Tstg |
-65° to +200°C |
| Thermal Resistance, Junction-to-Case, RthJC |
+50°C/W |
Electrical Characteristics: (TC = +25°C unless otherwise specified)
| Parameter |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Unit |
| OFF Characteristics |
| Collector-Emitter Breakdown Voltage |
V(BR)CEO |
IC = 5mA, IB = 0, Note 1 |
30 |
- |
- |
V |
| Collector-Base Breakdown Voltage |
V(BR)CBO |
IC = 0.1mA, IE = 0, Note 1 |
50 |
- |
- |
V |
| Emitter-Base Breakdown Voltage |
V(BR)EBO |
IE = 0.1mA, IC = 0 |
30 |
- |
- |
V |
| Collector Cutoff Current |
ICEO |
VCE = 28V, IB = 0 |
- |
- |
0.1 |
mA |
| ON Characteristics |
| DC Current Gain |
hFE |
VCE = 15V, IC = 50mA |
30 |
- |
300 |
|
| Dynamic Characteristics |
| Current Gain-Bandwidth Product |
fT |
VCE = 28V, IC = 50mA, f = 200MHz |
1500 |
1800 |
- |
MHz |
| Collector Output Capacitance |
Cob |
VCB = 30V, IE = 0, f = 1MHz |
- |
2.5 |
3.5 |
pF |
| Collector Input Capacitance |
Cib |
VEB = 500mV, IC = 0, f = 1MHz |
- |
8 |
10 |
pF |
| Functional Test |
| Noise Figure, Narrow Band |
NFNB |
VCE = 10V, IC = 10mA, f = 200MHz |
- |
2.7 |
- |
dB |
| Noise Figure, Broad Band |
NFBB |
VCE = 15V, IC = 50mA, f = 216MHz |
- |
7.0 |
8.0 |
dB |
| Power Gain at Optimum Noise Figure |
GVE |
VCE = 15V, IC = 50mA, f = 260MHz |
6.8 |
7.2 |
- |
dB |
| Cross Modulation |
X-MOD |
VCE = 15V, IC = 50mA, PO = +45dBmV, Note 2 |
- |
-60 |
-57 |
dB |
| Second Order Distortion |
2nd O |
VCE = 15V, IC = 50mA, PO = +45dBmV, Note 3 |
- |
-60 |
-57 |
dB |
Note 1. Pulsed through 25mH Inductor.
Note 2. 12 Channel Flat - NCTA Channel 2 through 12 100% Mod (Square wave) Channel 13CW.
Note 3. Channel 2 and Channel G Intermod Product on Channel 13.
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