NTE75 Si NPN Transistor 5A 80V Amplifier Switch TO-111 (Stud Mount)

Info as pdf-file

Description:
The NTE75 is a silicon NPN transistor in a TO111 type stud mount package that provides a unique combination of low saturation voltage, high gain, and fast switching. This device is ideally suited for power supply, pulse amplifier, and similar high efficiency power switching applications.

Features:
- Fast Switching: tr, tf = 300ns (Max)
- Low Saturation Voltage: 250mV max @ 1A

Absolute Maximum Ratings:
Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110V
Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Power Dissipation, PD
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65° to +200°C
Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.33°C/W


Electrical Characteristics: (T_A = +25°C unless otherwise specified)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Breakdown Voltage	V(BR)CBO	IC = 10µA	110	-	-	V
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC = 100mA, Note 1	80	-	-	V
Emitter-Base Breakdown Voltage	V(BR)EBO	IE = 10µA	8	-	-	V
Collector-Emitter Cutoff Current	ICEO	VCE = 60V	-	-	100	µA
	ICEX	VCE = 110V, VEB = 500mV	-	-	10	µA
Collector-Base Cutoff Current	ICBO	VCB = 80V	-	-	0.4	µA
Emitter-Base Cutoff Current	IEBO	VEB = 6V	-	-	0.4	µA
DC Current Gain (Note 1)	hFE	VCE = 5V, IC = 50mA	40	-	-
		VCE = 5V, IC = 1A	40	-	120
		VCE = 5V, IC = 1A, TA = -65°C	15	-	-
		VCE = 5V, IC = 5A	15	-	-
Collector Saturation Voltage	VCE(sat)	IC = 1A, IB = 100mA, Note 1	-	-	0.25	V
		IC = 5A, IB = 500mA, Note 1	-	-	1.5	V
Base Saturation Voltage	VBE(sat)	IC = 1A, IB = 100mA, Note 1	-	-	1.2	V
Base ON Voltage	VBE(on)	VCE = 2V, IC = 1A, Note 1	-	-	1.2	V
AC Current gain	hFE	VCE = 5V, IC = 50mA, f = 1kHz	40	-	20
Current Gain-Bandwidth Product	fT	VCE = 10V, IC = 1A, f = 10MHz	20	-	120	MHz
Output Capacitance	Cob	VCE = 10V, IE = 0, f = 1MHz	-	-	150	pF
Delay Time	td	VCC = 20V, IC = 1A, IB1 = -IB2 = 100mA, Pulse Width = 2µs, Duty Cycle </= 2%, Source Impedance = 50 Ohm	-	-	60	ns
Rise Time	tr		-	-	300	ns
Storage Time	ts		-	-	1.7	µs
Fall Time	tf		-	-	300	ns

Note 1. Pulse Width = 300µs, Duty Cycle </= 2%.

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