NTE71 Si NPN Transistor 20A 150V Fast Switch TO-63

Info as pdf-file

Description:
The NTE71 is silicon NPN transistor in a TO63 stud mount package utilizing C2R processing that provides surface stabilization for high voltage operation and enhances long term reliability.

Absolute Maximum Ratings:
Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Emitter-Base VOltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65° to +200°C


Electrical Characteristics: (T_C = +25°C unless otherwise specified)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
OFF Characteristics
Collector-Emitter Sustaining Voltage	V(BR)CEO(sus)	IC = 100mA	150	-	-	V
Collector Cutoff Current	ICEX	VCE = 150V, VBE = -1.5V	-	-	2	mA
		VCE = 150V, VBE = -1.5V, TC = +150°C	-	-	20	mA
Emitter Cutoff Current	IEBO	VEB = 10V	-	-	250	µA
ON Characteristics (Note 1)
DC Current Gain	hFE	IC = 10A, VCE = 3V	10	-	50
Collector-Emitter Saturation Voltage	VCE(sat)	IC = 10A, IB = 1.5A	-	-	1.5	V
Base-Emitter Voltage	VBE	IC = 10A, IB = 1.5A	-	-	2.5	V
Dymanic Characteristics
Small-Signal Current Gain	hfe	VCE = 3V, IC = 10A, f = 1MHz	0.6	-	-
Turn-On Time	ton	VCC = 30V, IC = 10A, IB1 = 1.5A, IB2 = 1.5A	-	-	3.5	µs
Turn-Off Time	toff		-	-	12.0	µs
Rise Time	tr		-	-	3.5	µs
Storage Time	ts		-	-	6.0	µs
Fall Time	tf		-	-	6.0	µs

Note 1.

Pulse test:  Pulse Width = 300µs, Duty Cycle </= 2%.

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