NTE71 Si NPN Transistor 20A 150V Fast Switch TO-63
Info as pdf-file
Description:
The NTE71 is silicon NPN transistor in a TO63 stud mount package utilizing C2R processing that
provides surface stabilization for high voltage operation and enhances long term reliability.
Absolute Maximum Ratings:
Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Emitter-Base VOltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65° to +200°C
Electrical Characteristics: (T
C = +25°C unless otherwise specified)
Parameter |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Unit |
OFF Characteristics |
Collector-Emitter Sustaining Voltage |
V(BR)CEO(sus) |
IC = 100mA |
150 |
- |
- |
V |
Collector Cutoff Current |
ICEX |
VCE = 150V, VBE = -1.5V |
- |
- |
2 |
mA |
VCE = 150V, VBE = -1.5V, TC = +150°C |
- |
- |
20 |
mA |
Emitter Cutoff Current |
IEBO |
VEB = 10V |
- |
- |
250 |
µA |
ON Characteristics (Note 1) |
DC Current Gain |
hFE |
IC = 10A, VCE = 3V |
10 |
- |
50 |
|
Collector-Emitter Saturation Voltage |
VCE(sat) |
IC = 10A, IB = 1.5A |
- |
- |
1.5 |
V |
Base-Emitter Voltage |
VBE |
IC = 10A, IB = 1.5A |
- |
- |
2.5 |
V |
Dymanic Characteristics |
Small-Signal Current Gain |
hfe |
VCE = 3V, IC = 10A, f = 1MHz |
0.6 |
- |
- |
|
Turn-On Time |
ton |
VCC = 30V, IC = 10A, IB1 = 1.5A, IB2 = 1.5A |
- |
- |
3.5 |
µs |
Turn-Off Time |
toff |
- |
- |
12.0 |
µs |
Rise Time |
tr |
- |
- |
3.5 |
µs |
Storage Time |
ts |
- |
- |
6.0 |
µs |
Fall Time |
tf |
- |
- |
6.0 |
µs |
Note 1. | Pulse test: Pulse Width = 300µs, Duty Cycle </= 2%. |
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