NTE6090
Silicon Dual Power Rectifier SCHOTTKY, 45V, 30A TO-3P or TO-218

Description:
The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type package designed using the Schottky Barrier principle with a platinum barrier metal.

Features:
- Dual Diode Construction: Pin1 and Pin3 may be Connected for Parallel Operation at Full Range
- Guarding for Stress Protection
- Low Forward Voltage
- +150°C Operating Junction Temperature
- Guaranteed Reverse Avalanche

Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Working Peak Reverse Voltage, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
DC Blocking Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Average Rectified Forward Current (VR = 45V, TC = +105°C), IF(AV)
Per Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Per Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak Repetitive Forward Current, Per Diode (VR = 45V, Square Wave, 20kHz), IFRM . . . . . . . . 30A
Non-Repetitive Peak Surge Current, IFSM
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60Hz) . . . . . . . . . . 200A
Peak Repetitive Reverse Current, Per Diode (2μs, 1kHz), IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65° to +175°C
Peak Surge Junction Temperature (Forward Current Applied), TJ(pk) . . . . . . . . . . . . . . . . . . . +175°C
Voltage Rate of Change (VR = 45V), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V/μs
Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4°C/W
Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C/W


NTE Electronic Components (our whole assortment)
Semiconductors (our whole assortment)

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