NTE67
MOSFET N-Chan, Enhancement Mode High Speed Switch TO-220

Description:
The NTE67 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

Features:
- Lower RDS(ON)
- Improved Inductive Ruggedness
- Fast Switching Times
- Lower Input Capacitance
- Extended Safe Operating Area
- Improved High Temperature Reliability

Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings:
Drain-Source Voltage (TJ = +25°C to +150°C), VDSS.................................. 400V
Drain-Gate Voltage (RGS = 1MΩ, TJ = +25°C to +125°C), VDGR.........................400V
Gate-Source Voltage, VGS.........................................................±20V
Continuous Drain Current, ID
TC = +25°C.................................................................4.5A
TC = +100°C................................................................ 3.0A
Pulsed Drain Current (Note 2), IDM...................................................18A
Pulsed Gate Current, IGM.......................................................... ±1.5A
Single Pulsed Avalanche Energy (Note 3), EAS...................................... 290mJ
Avalanche Current, IAS.............................................................5.5A
Total Power Dissipation (TC = +25°C), PD............................................ 75W
Derate Above 25°C.......................................................0.6W/°C
Operating Junction Temperature Range, TJ.................................. -55° to +150°C
Storage Temperature Range, Tstg.......................................... -55° to +150°C
Lead Temperature (During Soldering, 1/8” from case, 5sec max.), TL...................+300°C
Thermal Resistance, Junction-to-Case, RthJC.....................................1.67K/W
Thermal Resistance, Junction-to-Ambient, RthJA.................................... 80K/W
Thermal Resistance, Case-to-Sink (Mounting surface flat, smooth, and greased), RthCS 0.24K/W

Note 1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
Note 2. Repetitive rating: Pulse width limited by max, junction temperature.
Note 3. L = 17mH, Vdd = 50V, RG = 25Ω, Starting TJ = +25°C.


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