NTE60 (NPN)
Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications

See also >>> NTE61 (PNP)

Description:
The NTE60 (NPN) and NTE61 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications.

Features:
- High Safe Operating Area: 250W @ 50V
- For Low Distortion Complementary Designs
- High DC Current Gain: hFE = 25 Min @ IC = 5A

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Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO(sus).................................................140V
Collector-Base Voltage, VCBO...................................................... 140V
Emitter-Base Voltage, VEBO.......................................................... 5V
Continuous Collector Current, IC.....................................................20A
Continuous Base Current, IB.......................................................... 5A
Continuous Emitter Current, IE.......................................................25A
Total Power Dissipation (TC = +25°C), PD...........................................250W
Derate Above 25°C...................................................... 1.43W/°C
Operating Junction Temperature Range, TJ.................................. -65° to +200°C
Storage Temperature Range, Tstg.......................................... -65° to +200°C
Thermal Resistance, Junction-to-Case, RthJC.................................... 0.70°C/W
Lead Temperature (During Soldering, 1/16” from Case, 10sec Max), TL................ +265°C

Note 1. Matched complementary pairs are available upon request (NTE61MCP). Matched complementary pairs have their gain specification (hFE) matched to within 10% of each other.


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