NTE6090
Silicon Dual Power Rectifier SCHOTTKY, 45V, 30A TO-3P or TO-218

Description:
The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type package designed using the Schottky Barrier principle with a platinum barrier metal.

Features:
- Dual Diode Construction: Pin1 and Pin3 may be Connected for Parallel Operation at Full Range
- Guarding for Stress Protection
- Low Forward Voltage
- +150°C Operating Junction Temperature
- Guaranteed Reverse Avalanche

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Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage, VRRM...............................................45V
Working Peak Reverse Voltage, VRWM................................................ 45V
DC Blocking Voltage, VR............................................................ 45V
Average Rectified Forward Current (VR = 45V, TC = +105°C), IF(AV)
Per Device.................................................................. 30A
Per Diode...................................................................15A
Peak Repetitive Forward Current, Per Diode (VR = 45V, Square Wave, 20kHz), IFRM........ 30A
Non-Repetitive Peak Surge Current, IFSM
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60Hz).......... 200A
Peak Repetitive Reverse Current, Per Diode (2μs, 1kHz), IRRM............................ 2A
Operating Junction Temperature Range, TJ.................................. -65° to +150°C
Storage Temperature Range, Tstg.......................................... -65° to +175°C
Peak Surge Junction Temperature (Forward Current Applied), TJ(pk)...................+175°C
Voltage Rate of Change (VR = 45V), dv/dt........................................ 1000V/μs
Thermal Resistance, Junction-to-Case, RthJC.....................................1.4°C/W
Thermal Resistance, Junction-to-Ambient, RthJA.................................... 40°C/W


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