NTE6400
Unijunction Transistor TO-39

See also >>> NTE6400A

Description:
The NTE6400 & NTE6400A Silicon Unijunction Transistors are three terminal devices having a stable “N” type negative resistance characteristic over a wide temperature range. A stable peak point voltage, a low peak point current, and a high pulse pulse current make these devices useful in oscillators, timing circuits, trigger circuits, and pulse generators where they can serve the purpose of two conventional silicon or germanium transistors. These devices are intended for applications where circuit economy is of primary importance.

Info as pdf-file
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Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
RMS Power Dissipation, PD
Unstabilized.............................................................. 450mW
Stabilized................................................................ 600mW
Derate Above 25°C.................................................. 3.9mW/°C
RMS Emitter Current, IE...........................................................50mA
Peak Emitter Current (TJ = +150°C), IE(peak)............................................ 2A
Emitter Reverse Voltage (TJ = +150°C)...............................................60V
Interbase Voltage, VBB
NTE6400.................................................................... 35V
NTE6400A.................................................................. 55V
Operating Temperature Range, Topr
Unstabilized.......................................................-65° to +140°C
Stabilized.........................................................-65° to +175°C
Storage Temperature Range, Tstg.......................................... -65° to +175°C
Thermal Resistance, Junction-to-Case, RthJC.................................. 0.16°C/mW


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