NTE66
MOSFET N-Ch, Enhancement Mode High Speed Switch TO-220

Description:
The NTE66 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

Features:
- Lower RDS(ON)
- Improved Inductive Ruggedness
- Fast Switching Times
- Lower Input Capacitance
- Extended Safe Operating Area
- Improved High Temperature Reliability

Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings:
Drain-Source Voltage (TJ = +25°C to +150°C), VDSS.................................. 100V
Drain-Gate Voltage (RGS = 1MΩ, TJ = +25°C to +125°C), VDGR.........................100V
Gate-Source Voltage, VGS.........................................................±20V
Continuous Drain Current, ID
TC = +25°C.................................................................. 14A
TC = +100°C.................................................................10A
Pulsed Drain Current (Note 2), IDM...................................................56A
Pulsed Gate Current, IGM.......................................................... ±1.5A
Single Pulsed Avalanche Energy (Note 3), EAS.......................................69mJ
Avalanche Current, IAS.............................................................. 14A
Total Power Dissipation (TC = +25°C), PD............................................ 77W
Derate Above 25°C...................................................... 0.62W/°C
Operating Junction Temperature Range, TJ.................................. -55° to +150°C
Storage Temperature Range, Tstg.......................................... -55° to +150°C
Lead Temperature (During Soldering, 1/8” from case, 5sec max.), TL...................+300°C
Thermal Resistance, Junction-to-Case, RΘJC.....................................1.62K/W
Thermal Resistance, Junction-to-Ambient, RΘJA.................................... 80K/W
Thermal Resistance, Case-to-Sink (Mounting surface flat, smooth, and greased), RΘCS.0.5K/W

Note 1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
Note 2. Repetitive rating: Pulse width limited by max, junction temperature.
Note 3. L = 0.53mH, Vdd = 25V, RG = 25Ω, Starting TJ = +25°C.


NTE Electronic Components (our whole assortment)
Semiconductors (our whole assortment)

Pictures are a guide only actual product may vary. Subject to alterations and errors. Help us to eliminate errors:
Please report any errors here.


Are you searching for replacements of semiconductors? The following link brings you to the search window of NTE Electronics (a world wide supplier of high quality electronic components). This QUICKCross software can assist users in selecting the proper NTE replacement device.

QUICKCross Search Engine for NTE Replacement Semiconductors

Note about NTE replacement devices (formerly ECG Philips and Sylvania):
NTE has one of the most extensive semiconductor lines in the industry. All NTE semiconductors are guaranteed to meet or exceed original specifications.