NTE5689
TRIAC − 400V, 40Amp, 1/2” Press Fit

See also >>> NTE5688, NTE5690

Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings:
Repetitive Peak Off−State Voltage (Gate Open, TJ = +110°C, Note 1), VDRM
NTE5688 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5689 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5690 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On−State Current (TC = +80°C, Conduction Angle = 360°), IT(RMS) . . . . . . . . . . . . . . . . . . 40A
Non−Repetitive Peak Surge On−State Current (One−Cycle, at 50Hz or 60Hz), ITSM . . . . . . . 400A
Peak Gate−Trigger Current (for 3μs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Peak Gate−Power Dissipation (IGT ≤ IGTM), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Average Gate−Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +110°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8°C/W Typ

Electrical Characteristics: (At Specified Case Temperature)
Peak Off−State Current, IDRM
(Gate Open, TC = +110°C, VDRM = Max Rating, Note 1) . . . . . . . . . . . . . . . . . . . . . . 1mA Max
Maximum On−State Voltage (TC = +25°C, IT = 40A, Note 1), VTM . . . . . . . . . . . . . . . . . . . . 2.0V Max
DC Holding Current (Gate Open, TC = +25°C, Note 1), IHold . . . . . . . . . . . . . . . . . . . . . . . 60mA Max
Critical Rate−of−Rise of Off−State Voltage, Critical dv/dt
(VD = VDRM, Gate Open, TC = +110°C, Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V/μs
Critical rate−of−Rise of commutation Voltage, Commutating dv/dt
(VD = VDRM, IT = 40A, Gate Unenergized, TC = +80°C, Note 1) . . . . . . . . . . . . . . . . . . . 3V/μs
DC Gate−Trigger Current (VD = 12VDC, RL = 30Ω, TC = +25°C), IGT
(T2+ Gate +, T2− Gate −) Quads I and III . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Max
(T2+ Gate −, T2− Gate +) Quads II and IV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Max
DC Gate−Trigger Voltage (VD = 12VDC, RL = 30Ω, TC = +25°C), VGT . . . . . . . . . . . . . . . . 2.5V Max
Gate−Controlled Turn−On Time, Tgt
(VD = 400V, IGT = 200mA, tR = 0.1μs, IT = 10A (Peak), TC = +25°C) . . . . . . . . . . . . . . . . 3μs

Note 1. All values apply in either direction.


NTE Electronic Components (our whole assortment)
Semiconductors (our whole assortment)

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