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NTE5620 Triac 8A 800V TO-220 Full Pack

Bestell-Nr.:    NTE5620


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NTE5620 NTE-5620 | ECG5620 ECG-5620 | NTE Electronics NTE5620
TRIAC 800V, 8A, TO-220 Full Pack

The NTE5620 TRIAC is designed primarily for full-wave AC control applications, such as light dimmers, heater controls, motor controls, and power supplies; or wherever full wave silicon gate controlled solid state devices are needed. TRIAC type thyristors switch from a blocking to a conducting state for either polarity of applied voltage with positive or negative gate triggering.

Features:
- Blocking Voltage - 800 Volts
- All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
- Small, Rugged, TO220 Full Pack for Low Thermal Resistance, High Heat Dissipation, and Durability
- Gate Triggering Guaranteed in Four Modes

Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings:
Peak Repetitive Off-State Voltage, VDRM
(TJ = -40° to +125°C, 1/2 Sine Wave 50 to 60HZ, Gate Open, Note 1) . . . . . . . . . . . . . 800V
On-State Current RMS, IT(RMS)
(TC = +80°C, Full Cycle Sine Wave 50 to 60HZ, Note 2 ) . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak Non-Repetitive Surge Current, ITSM
(One Full Cycle, 60Hz, TC = +125°C, Preceded and followed by rated current) . . . . . . 100A
Peak Gate Power (TC = +80°C, Pulse Width = 2μs), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16W
Average Gate Power (TC = +80°C, t = 8.3ms), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Peak Gate Current (Pulse Width = 2μs), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
RMS Isolation Voltage (TA = +25°C, Relative Humidity ≤ 20%), V(ISO) . . . . . . . . . . . . . . . . . . . 1500V
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40° to +150°C
Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2°C/W
Typical Thermal Resistance, Case-to-Sink, RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2°C/W
Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60°C/W

Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage.
Note 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.


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