NTE5483
Silicon Controlled Rectifier (SCR) 200V, 8A, TO-64

See also >>> NTE5480 thru NTE5487

Description:
The NTE5480 through NTE5487 are multi-purpose PNPN silicon controlled rectifiers in a TO64 type package suited for industrial and consumer applications. These 8 amp devices are available in voltages ranging from 25V to 600V.

Features:
- Uniform Low-Level Noise-Immune Gate Triggering: IGT = 10mA Typ @ TC = +25°C
- Low Forward “ON” Voltage: vT = 1V Typ @ 5A @ +25°C
- High Surge-Current Capability: ITSM = 100A Peak
- Shorted Emitter Construction

Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings: (TJ = -40° to +100°C unless otherwise specified)
Peak Repetitive Forward and Reverse Blocking Voltage (Note 1), VDRM or VRRM
NTE5480.................................................................... 25V
NTE5481.................................................................... 50V
NTE5482...................................................................100V
NTE5483...................................................................200V
NTE5484...................................................................300V
NTE5485...................................................................400V
NTE5486...................................................................500V
NTE5487 (This device is discontinued)...................................... 600V
Forward Current RMS, IT(RMS)........................................................ 8A
Peak Forward Surge Current (One Cycle, 60Hz, TJ = -40° to +100°C, ITSM...............100A
Circuit Fusing (t ≤ 8.3ms, TJ = -40° to +100°C), I2t...................................40A2s
Peak Gate Power, PGM.............................................................5W
Average Gate Power, PG(AV)........................................................ 0.5W
Peak Gate Current, IGM.............................................................. 2A
Peak Gate Voltage (Note 2), VGM.................................................... 10V
Operating Temperature Range, TJ.......................................... -40° to +100°C
Storage Temperature Range, Tstg.......................................... -40° to +150°C
Typical Thermal Resistance, Junction-to-Case, RthJC.............................. 1.5°C/W
Typical Thermal Resistance, Case-to-Ambient, RthJA................................ 50°C/W

Note 1. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking capability in a manner such that the voltage applied exceeds the rated blocking voltage.
Note 2. Devices should not be operated with a positive bias applied to the gate concurrently with a negative potential applied to the anode.


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