NTE583
Silicon Rectifier Diode Schottky, RF Switch DO-35

Description:
The NTE583 is a metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. This device is primarly intented for high level UHF/VHF detection and pulse application with broad dynamic range.

Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings: (TA = +25°C, Limiting Values)
Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Forward Continuous Current (Figure 1), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA
Surge Non-Repetitive Forward Current (tp ≤ 1s, Figure 1), IFSM . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65° to +200°C
Thermal Resistance, Junction-to-Ambient (Figure 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . 400°C/W


NTE Electronic Components (our whole assortment)
Semiconductors (our whole assortment)

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NTE has one of the most extensive semiconductor lines in the industry. All NTE semiconductors are guaranteed to meet or exceed original specifications.