NTE573
Schottky Barrier Rectifier

Description:
The NTE573 is an axial lead metal-to-silicon power diode using the Schottky Barrier principle. State- of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. This device is ideally suited for use in low-voltage, high-frequency inverters, as free wheeling diodes, and polarity protection diodes.

Features:
- Low Forward Voltage
- Low Power Loss
- High Surge Capacity
- Low Stored Charge Majority Carrier Conduction
- High Efficiency
- High Switching Capability

Info as pdf-file
NTE-ECG replacement list as pdf-file
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Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Working Peak Reverse Voltage, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
DC Blocking Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
RMS Reverse Voltage, VR(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42V
Average Forward Rectified Current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Non-Repetitive Peak Surge Current, IFSM
(Surge applied at rated load conditions half-wave, single phase, 60Hz, TL = +70°C) . 250A
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65° to +125°C


NTE Electronic Components (our whole assortment)
Semiconductors (our whole assortment)

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