NTE5426
Silicon Controlled Rectifier (SCR) Sensitive Gate

Description:
The NTE5426 is silicon controlled rectifier (SCR) in an isolated tab TO220 type package. This device may be switched from off-state to conduction by a current pulse applied to the gate terminal and is designed for control applications in lighting, heating, cooling, and static switching relays.

Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings:
Repetitive Peak Off-State Voltage (Gate Open, TC = +110°C), VDRM . . . . . . . . . . . . . . . . . . . . . 400V
Repetitive Peak Reverse Voltage (Gate Open, TC = +110°C), VRRM . . . . . . . . . . . . . . . . . . . . . . 400V
RMS On-State Current (TC = +80°C, 180° Conduction Angle), IT(RMS) . . . . . . . . . . . . . . . . . . . . 10A
Peak Surge (Non-Repetitive) On-State Current (One Cycle, 50 or 60Hz), ITSM . . . . . . . . . . . . 80A
Peak Gate-Trigger Current (3μs max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak Gate-Power Dissipation (IGT = IGTM), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16W
Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40° to +150°C
Typical Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0°C/W


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Semiconductors (our whole assortment)

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