NTE588
Silicon Diode 200V, 3A, Ultra Fast Switch

Features:
- High Reliability
- Low Leakage
- Low Forward Voltage
- High Current Capbility
- Super Fast Switching Speed < 35nS
- High Surge Capability
- High Surge Capability
- Good for 200kHz Power Supplier

Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components

Maximum Ratings and Electrical Characteristics:
(TA = +25°C unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.)
Maximum Recurrent Peak Reverse Voltage...........................................150V
Maximum RMS Voltage............................................................ 105V
Maximum DC Blocking Voltage...................................................... 150V
Maximum Average Forward Current (.375” (9.5mm) lead length at TA = +55°C).............3A
Peak Forward Surge Current, IFMsurge
8.3ms single half sine-wave superimposed on rated load........................ 125A
Maximum Forward Voltage at 3.0A DC.............................................. 0.95V
Maximum DC Reverse Current at Rated DC Blocking Voltage............................ 5μA
Maximum DC Reverse Current at Rated DC Blocking Voltage, TA = 150°C............... 50μA
Maximum Reverse Recovery Time (Note 1)...........................................35ns
Typical Junction Capacitance (Note 2).............................................. 155pF
Operating and Storage Temperature Range, TJ, Tstg.......................... -65° to +150°C

Note 1. Reverse Recovery Test Conditions: IF = 0.5A, IR = 1.0A, IRR = 0.25A
Note 2. Measured at 1MHz and applied reverse voltage of 4.0 volts.


NTE Electronic Components (our whole assortment)
Semiconductors (our whole assortment)

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NTE has one of the most extensive semiconductor lines in the industry. All NTE semiconductors are guaranteed to meet or exceed original specifications.