NTE455
N−Channel Silicon Dual−Gate MOS Field Effect Transistor (MOSFET)

Description:
The NTE455 is an N−Channel silicon dual−gate MOSFET designed for use as an RF amplifier in UHF TV tuners. This device is especially recommended for use in half wave length resonator type tuners.

Features:
- Low Reverse Transfer Capacitance: Crss = 0.02pF Typ
- High Power Gain: Gps = 18dB Typ
- Low Noise Figure: NF = 3.8dB Typ

Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Drain−Source Voltage, VDSX.........................................................20V
Gate1−Source Voltage, VG1S.......................................................±10V
Gate2−Source Voltage, VG2S.......................................................±10V
Drain Current, ID.................................................................25mA
Total Power Dissipation, PD...................................................... 200mW
Maximum Channel Temperature, Tch...............................................+125°C
Storage Temperature Range, Tstg.......................................... −55° to +125°C


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