35.20CHF
ab 10 32.29CHF

NTE3312 N-Channel IGBT 8A 1200V Bipolar Transistor TO-3PJ

Bestell-Nr.:    NTE3312


Availability:     PICTURE_ONLY_FOUR
  Ready for shipping!


NTE3312 NTE-3312 | ECG3312 ECG-3312 | NTE Electronics

NTE3312 Insulated Gate Bipolar Transistor N−Channel Enhancement Mode, High Speed Switch

Formerly: ECG3312

Insulated Gate Bipolar Transistor N−Channel Enhancement Mode, High Speed Switch

Features:
- High Input Impedance
- High Speed
- Low Saturation Voltage
- Enhancement Mode

Applications:
- High Power Switching
- Motor Control

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Raings: (TA = +25°C unless otherwise specified)
Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
Gate−Emitter Voltage, VGES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Collector Current, IC
DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Pulse (1ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C

This product is discontinued.
Only while stock lasts.



NTE Electronic Components (our whole assortment)
Semiconductors (our whole assortment)

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