NTE3093
Optoisolator NPN Split Darlington Output

Description:
The NTE3093 coupler uses a light emitting diode (LED) and an integrated high gain photon detector to provide 3000V DC electrical insulation, 500V/μs common mode transient immunity and extremely high current transfer ratio between inut and output. Separate pins for the photodiode and output stage result in TTL compatible saturation voltages and high speed operation. Where desired, the VCC and VO terminals may be tied together to achieve conventional photodarlington operation. A base access terminal allows a gain bandwidth adjustment to be made.

Features:
- High Current Transfer Ratio
- Low Input Current Requirement
- TTL Compatible Output
- 3000V DC Withstand Test Voltage
- High Common Mode Rejection
- Base Access Allows Gain Bandwidth Adjustment
- High Output Current
- DC to 1Mbit/s Operation

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Input Diode
Reverse Voltage, VR.................................................................5V
Peak Current (50% Duty Cycle,1ms Pulse Width), IF.................................. 40mA
Peak Transient Current (≤ 1μs Pulse Width, 300pps), IF...............................20mA
Power Dissipation, PD............................................................ 35mW
Derate Linearly Above 50°C.............................................0.7mW/°C
Output Transistor
Current (Pin6), IO.................................................................60mA
Derate Linearly Above 25°C.............................................. 0.7mA/°C
Emitter-Base Reverse Voltage (Pin5-7).............................................. 0.5V
Supply Voltage (Pin8-5), VCC.................................................-0.5 to 18V
Output Voltage (Pin6-5), VO.................................................. -0.5 to 18V
Power Dissipation, PD............................................................ 35mW
Derate Linearly Above 50°C.............................................0.7mW/°C
Total Device
Operating Temperature Range, Topr...........................................0° to +70°C
Storage Temperature Range, Tstg.......................................... -55° to +125°C
Lead Temperature (During Soldering, 1.6mm below seating plane, 10sec Max), TL...... +260°C

Note 1. The small junction sizes inherent to the design of this bipolar component increases the component´s susceptibility to damage from electrostatic discharge (ESD). It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degredation which may be induced by ESD.


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