NTE367
Silicon NPN Transistor RF Power Amplifier
PO = 45W @ 512MHz

Description:
The NTE367 is a silicon NPN RF power transistor in a W65 type package designed for 12.5V UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512MHz.

Features:
- Specified 12.5V, 470MHz Characteristics:
Output Power: 45W
Minimum Gain: 4.8dB
Efficiency: 55%
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- Built-In Matching Network for Broadband Operation
- Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16V High Line and 50% Overdrive

Info as pdf-file
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Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO...................................................... 16V
Collector-Base Voltage, VCBO.......................................................36V
Emitter-Base Voltage, VEBO.......................................................... 4V
Continuous Collector Current, IC...................................................... 9A
Total Device Dissipation (TC = +25°C), PD...........................................117W
Derate Above 25°C.....................................................670mW/°C
Storage Temperature Range, Tstg.......................................... -65° to +150°C
Thermal Resistance, Junction to Case, RΘJC...................................... 1.5°C/W


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