NTE362
Silicon NPN Transistor RF Power

Description:
The NTE362 is designed for 7.0 to 15 volts, UHF large signal amplifier applications required in industrial and commercial FM equipment operating in the 400 to 960MHz range.

Features:
- Specified 12.5 Volt, 470MHz Characteristics Power Output = 2.0 Watts
- Minimum Gain = 9.0dB
- Efficiency = 60% Minimum
- RF ballasting provides protection against device damage due to load mismatch

Info as pdf-file
NTE-ECG Replacement List as pdf-file
Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current−Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4V
Total Device Dissipation (TC = +25°C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0W
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C
Stud Torque (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5 in−lbs

Note 1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers.
Note 2. For repeated assembly use 5 in−lbs.


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NTE has one of the most extensive semiconductor lines in the industry. All NTE semiconductors are guaranteed to meet or exceed original specifications.