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ab 100 13.10CHF

NTE329 NPN Si-Transistor RF Power Amplifier CB TO-39

Bestell-Nr.:    NTE329


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NTE329 NTE-329 | ECG329 ECG-329 | NTE Electronics NTE329
Silicon NPN Transistor RF Power Amp, CB

Description:
The NTE329 is designed primarily for use in large-signal output amplifier stages. Intended for use in Citizen-Band communications equipment operating to 30MHz. High breakdown voltages allow a high percentage of up-modulation in AM circuits.

Features:
- Specified 12.5V, 28MHz Characteristic:
Power Output = 3.5W
Power Gain = 10dB
Efficiency = 70% Typical

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Device Dissipation (TC = +25°C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28.6mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65° to +200°C

Note 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.


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Note about NTE replacement devices (formerly ECG Philips and Sylvania):
NTE has one of the most extensive semiconductor lines in the industry. All NTE semiconductors are guaranteed to meet or exceed original specifications.
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