NTE310
Integrated Thyristor/Rectifier (ITR) TV Horizontal Deflection & Trace Switch

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Repetitive Peak Forward Off-State and Reverse Voltage, VDRM, VRRM . . . . . . . . . . . . . . . . . . . 800V
RMS On-State Current, ITRMSM, IFRMSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Mean On-State Current (TC = +80°C), ITAVM, IFAVM
Thyristor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.4A
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.45A
Repetitive Peak On-State Current, ITRM, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
Surge Current (t = 10ms, tvi = +100°C), ITSM, IFSM
Thyristor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A
Non-Repetitive Rate of Rise of On-State Current, di/dtcrit . . . . . . . . . . . . . . . . . . . . . . . . . . . 500A/μs
Repetitive Rate of Rise of On-State Current (ITM = 20A, tvi = +100°C, VDM = 640V), di/dtcrit
(Pulse Generator Data: vL = 8V, iK = 0.25A, diG/dt ≥ 0.25A/μs)
fo = 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A/μs
fo = 16kHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A/μs
Rate of Rise of Off-State Voltage (tvi = +100°C, VD = 536V), dv/dtcrit . . . . . . . . . . . . . . . . . . 400V/μs
Rate of Rise of Voltage Subsequent to Prior On-State Current, dv/dtcrit
tvi = +100°C, VD = 536V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V/μs
Peak Gate Power Losses (tg ≤ 10μs), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Total Mean Gate Power Loss for One Cycle, PG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40° to +130°C
Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.3°C/W
Thermal Resistance, Junction-to-Ambient, RthJA
Without Heatsink . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35°C/W
On Vertical Cooling Fin 60mm x 60mm x 1.5mm, Al or Cu, Roughened Surface . . 10°C/W

Electrical Characteristics:
Maximum On-State Voltage (tvi = +25°C, iT = iF = 10A), VT, VF
Thyristor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.16V
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2V
Threshold Voltage, V(TO)
Thyristor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6V
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4V
Forward Slope Resistance, rT, rF
Thyristor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53Ω
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70Ω
Maximum Gate Trigger Voltage (tvi = +25°C, VD = 6V, RA = 20Ω), VGT . . . . . . . . . . . . . . . . . . . 2.0V
Minimum Gate Trigger Voltage (tvi = +100°C, VD = 6V, RA = 20Ω), VGT . . . . . . . . . . . . . . . . . . . 0.1V
Maximum Gate Trigger Current (tvi = +25°C, VD = 6V, RA = 20Ω), IGT . . . . . . . . . . . . . . . . . . . 50mA
Maximum Holding Current (tvi = +25°C, VD = 6V, RA = 20Ω), IH . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Maximum Latching Current (tvi = +25°C, VD = 6V, RGK ≥ 20Ω), IL . . . . . . . . . . . . . . . . . . . . . . 210mA
(Pulse Generator Data: iG = 0.25A, diG/dt = 0.25A/μs, tg = 4μs)
Typical Capacitance, Anode-Cathode at Zero Voltage (tvi = +25°C, fo = 16kHz), Czero . . . . . 250pF
Maximum Lag Charge (tvi = +100°C, iFM = 10A, -diF/dt = 10A/μs), QS . . . . . . . . . . . . . . . . . 0.96μAs
Maximum Forward Off-State and Reverse Current (tvi = +100°C, vD = 800V), iD, iR . . . . . . . 1.5mA
Maximum Gate Controlled Delay Time (tvi = +25°C, VD = 536V, iTM = 5A), tgd . . . . . . . . . . . . 0.8μs
(Pulse Generator Data: iG = 0.25A, diG/dt = 0.5A/μs)
Maximum Pulse Turn-Off Time (tvi = +100°C), tqp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.9μs
Typical Pulse Turn-Off Time (tvi = +80°C, fo = 16kHz), tqp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8μs
Maximum Turn-On Voltage Peak (tvi = +25°C, iFM = 1A, diF/dt = 5A/μs), uFRM . . . . . . . . . . . . . . . 3V
Maximum Reverse Recovery Time (tvi = +25°C, iFM = 10A, -diF/dt = 10A/μs), trr . . . . . . . . . . 0.7μs


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