NTE3083
Optoisolator NPN Darlington Transistor Output

Description:
The NTE3083 contains a gallium arsenide infrared emitter optically coupled to a silicon planer photo- darlington in a 6-Lead DIP type package.

Features:
- High Sensitivity: 1mA on the Input will Sink a TTL gate
- High Isolation: 3550VDC, 1012Ω, 0.5pF

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Storage Temperature Range, Tstg.......................................... -65° to +150°C
Operating Temperature Range, Topr........................................ -55° to +100°C
Lead Temperature (During Soldering, 10sec), TL.................................... +260°C
Total Power Dissipation (TA = +25°C), PD.......................................... 250mW
Derate Linearly to 100°C................................................ 3.3mW/°C
Input to Output Isolation Voltage (1sec), VISOL.................................... 3550VDC
Input Diode
Forward Current, IF...............................................................60mA
Reverse Voltage, VR.................................................................3V
Peak Forward Current (1μs pulse, 300pps), IFpeak...................................... 3A
Output Darlington
Collector-Emitter Voltage, VCEO...................................................... 30V
Collector-Base Voltage, VCBO.......................................................30V
Emitter-Base Voltage, VEBO.......................................................... 6V
Collector Current, IC.............................................................125mA


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