NTE3032
Phototransistor Detector NPN-Si, Visible & IR

Description:
The NTE3032 is a silicon NPN phototransistor detector in a TO18 type package designed for use in industrial inspection, processing and control, counter, sorter, switching, and logic circuit applications or any design requiring radiation sensitivity and stable characteristics.

Features:
- Sensitive Throughout Visible and Near Infrared Spectral Range for Wider Application
- Minimum Light Current: 8mH @ H = 5mW/cm2
- External Base for Added Control
- Annular Passivated Structure for Stability and Reliability
- Popular TO18 Type Package for Easy Handling and Mounting

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector-Emitter Voltage, VCEO...................................................... 30V
Collector-Base Voltage, VCBO.......................................................80V
Emitter-Collector Voltage, VECO.......................................................5V
Total Device Dissipation, PD...................................................... 150mW
Derate Above 25°C.................................................... 1.43mW/°C
Operating Junction Temperature Range, TJ.................................. -65° to +150°C
Storage Temperature Range, Tstg.......................................... -65° to +150°C


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