NTE384
Silicon NPN Transistor High Voltage Power Amp/Switch

Description:
The NTE384 is a multiple epitaxial silicon NPN power transistor in a TO66 type package utilizing a multiple-emitter site structure. Multiple-epitaxial construction maximizes the volt-ampere characteristic of the device and provides fast switching speeds. Multiple-emitter design ensures uniform current flow throughout the structure, which produces a high IS/b and a large safe-operation-area.
The NTE384 is characterized for use in inverters operating directly from a rectified 110V power line. The leakage current is specified at 450V; therefore the device can also be used in a series bridge configuration on a 220V line. The VEBO rating of 9V eases requirements on the drive transformer in inverter applications.

Features:
- Maximum Safe-Area-of-Operation
- Low Saturation Voltages
- High Voltage Rating: VCER(sus) = 375V
- High Dissipation Rating: PT = 45W

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Absolute Maximum Ratings:
Collector-Base Voltage, VCBO...................................................... 375V
Collector-Emitter Sustaining Voltage
With Base Open, VCEO(sus)...................................................350V
With Reverse Bias (VBE) of -1.5V, VCEX(sus).................................... 375V
With External Base-Emitter Resistance (RBE) ≤ 50Ω, VCER(sus)...................375V
Emitter-Base Voltage, VEBO.......................................................... 9V
Collector Current, IC
Continuous...................................................................7A
Peak.......................................................................10A
Continuous Base Current, IB.......................................................... 4A
Transistor Dissipation (TC ≤ +25°C, VCE ≤ 40V), PT.................................... 45W
Operating Junction Temperature Range, Topr................................ -65° to +200°C
Storage Temperature Range, Tstg.......................................... -65° to +200°C
Lead Temperature (During Soldering, 1/32 in. (0.8mm) from case, 10sec max), TL.......+230°C
Thermal Resistance, Junction to Case (VCE = 20V, IC = 2.25A), RΘJC.................3.9°C/W


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