NTE320 (and NTE320F)
Silicon NPN RF Power Transistor 40W @ 175MHz

Description:
The NTE320 and NTE320F are silicon NPN power transistors designed for 12.5V VHF large-signal amplifier applications required in commercial and industrial equipment operating to 300MHz.

Features:
- Specified 12.5V, 175MHz Characteristics:
Output Power: 40W
Minimum Gain: 4.5dB
Efficiency: 70%
- Available in Two Different Package Styles:
T72 Stud Mount: NTE320
W52K Flange Mount: NTE320F

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO...................................................... 18V
Collector-Base Voltage, VCBO.......................................................36V
Emitter-Base Voltage, VEBO.......................................................... 4V
Continuous Collector Current, IC...................................................... 7A
Total Device Dissipation (TC = +25°C, Note 1), PD.....................................80W
Derate Above 25°C.....................................................460mW/°C
Storage Temperature Range, Tstg.......................................... -65° to +200°C
Stud Torque (NTE320 Only, Note 2).............................................. 6.5in. lb.

Note 1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers.
Note 2. For repeated assembly, use 5in. lb.


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