NTE313
Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and VHF/RF Amp

Description:
The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier applications. This device features high power gain, low noise, and excellent forward AGC characteristics.

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector-Base Voltage, VCBO.......................................................30V
Collector-Emitter Voltage, VCEO...................................................... 30V
Emitter-Base Voltage, VEBO.......................................................... 4V
Collector Current, IC.............................................................. 20mA
Total Power Dissipation, PT...................................................... 150mW
Maximum Junction Temperature, TJ...............................................+150°C
Storage Temperature Range, Tstg.......................................... -60° to +150°C


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Note about NTE replacement devices (formerly ECG Philips and Sylvania):
NTE has one of the most extensive semiconductor lines in the industry. All NTE semiconductors are guaranteed to meet or exceed original specifications.