NTE312 NTE-312 | ECG312 ECG-312 | NTE Electronics
NTE312
N-Channel Silicon Junction
Field Effect Transistor
Description:
The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The
NTE312 comes in a TO-92 package.
Features:
- High Power Gain: 10dB Min at 400MHz
- High Transconductance: 4000 μmho Min at 400MHz
- Low Crss: 1pF Max
- High (Yfs) / Ciss Ratio (High-Frequency Figure-of-Merit)
- Drain and Gate Leads Separated for High Maximum Stable Gain
- Cross-Modulation Minimized by Square-Law Transfer Characteristic
- For Use in VHF Amplifiers in FM, TV, and Mobile Communications Equipment
Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Drain-Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V
Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation (TA = +25°C ), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.88mW/°C
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65° to +150°C
Lead Temperature, During Soldering (1/16 Inch from Case for 10sec), TL . . . . . . . . . . . . . . . +260°C
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Semiconductors (our whole assortment)
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